Ga assisted oxide desorption on GaAs(001) studied by scanning tunnelling microscopy

Bastiman, F.; Lin, Jie; Cullis, A. G.; Hogg, R. A.; Skolnick, M. S.

doi:10.1016/j.jcrysgro.2010.02.015

Cited by 3 publications

(2 citation statements)

References 16 publications

(23 reference statements)

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“…The degas procedure entailed initial heating to T s ¼400 1C for 30 min, followed by a basic Ga assisted oxide removal step at T s ¼520 1C. Samples prepared in this manner have presented smooth as-cleaned surfaces negating the requirement for thick buffer layers [6]. The sample was then heated to T s ¼600 1C under an As 4 flux in line with conventional oxide removal.…”

Section: Methodsmentioning

confidence: 99%

Non-stoichiometric GaAsBi/GaAs (100) molecular beam epitaxy growth

Bastiman

Mohmad

et al. 2012

Journal of Crystal Growth

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Section: Methodsmentioning

confidence: 99%

Non-stoichiometric GaAsBi/GaAs (100) molecular beam epitaxy growth

Bastiman

Mohmad

et al. 2012

Journal of Crystal Growth

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“…which could start at 520 °C[38] and drives As 2 (or As 4 ) out of the surface, leaving mobile Ga atoms to diffuse toward Ga 2 O 3 and volatilize it according to[34,[39][40][41] …”

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confidence: 99%

Au-catalyzed desorption of GaAs oxides

et al. 2019

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Thermal desorption of native oxides on GaAs(100), (110) and (111)B surfaces around Au particles are studied in vacuum using in situ microspectroscopy. Two temperature-dependent desorption regimes, common to all surfaces, are identified. The low-temperature desorption regime spatially limited to the vicinity of some Au nanoparticles (NPs) is catalytically enhanced, resulting in oxide pinholes which expand laterally into macro holes many times the size of the catalyzing NPs and with shapes dictated by the underlying crystallography. The hightemperature desorption regime causes homogeneous oxides thinning and, ultimately, complete oxide desorption. The temperature difference between the two regimes is ∼25 °C-60 °C. After oxide desorption and depending on Au size and GaAs surface orientation, Au particles may dissolve the fresh GaAs surface and form mobile AuGa 2 /Ga core/shell units, or form stationary AuGa 2 crystallites, or the catalyzing Au particles may run with minimal reaction with the GaAs surface. These results will add to the fundamental understanding of many Au-based nanofabrication processes, particularly the epitaxial growth of vertical and lateral nanowires.

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Photoluminescence investigation of high quality GaAs1−xBix on GaAs

Mohmad

Bastiman

Ng³

et al. 2011

Applied Physics Letters

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Dynamics of above-barrier state excitons in multi-stacked quantum dots J. Appl. Phys. 110, 093515 (2011) Substrate nitridation induced modulations in transport properties of wurtzite GaN/p-Si (100) heterojunctions grown by molecular beam epitaxy J. Appl. Phys. 110, 093718 (2011) Extremely high absolute internal quantum efficiency of photoluminescence in co-doped GaN:Zn,Si Appl. Phys. Lett. 99, 171110 (2011) Two-color InGaN/GaN microfacet multiple-quantum well structures grown on Si substrate J. Appl. Phys. 110, 083518 (2011) Experimental evidence of Ga-vacancy induced room temperature ferromagnetic behavior in GaN films Appl. Phys. Lett. 99, 162512 (2011) Additional information on Appl. Phys. Lett.

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Ga assisted oxide desorption on GaAs(001) studied by scanning tunnelling microscopy

Cited by 3 publications

References 16 publications

Non-stoichiometric GaAsBi/GaAs (100) molecular beam epitaxy growth

Non-stoichiometric GaAsBi/GaAs (100) molecular beam epitaxy growth

Au-catalyzed desorption of GaAs oxides

Photoluminescence investigation of high quality GaAs1−xBix on GaAs

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