Comparative study on in situ surface cleaning effect of intrinsic oxide-covering GaAs surface using TMA precursor and Al₂O₃ buffer layer for HfGdO gate dielectrics

Abstract

In this work, comparative study on the cleaning effect of the intrinsic oxide covering GaAs surface using TMA precursor and Al2O3 buffer layer were performed.

Interface chemistry modulation and dielectric optimization of TMA-passivated HfDyOx/Ge gate stacks using doping concentration and thermal treatment

“…Recently, atomic layer deposition (ALD)-driven trimethyl aluminum (TMA) with a self-cleaning effect has been investigated systematically to suppress the inter-diffusion and improve the interface stability of a high-k/Ge gate stack. 12,13 Based on these reports, it can be noted that the TMA precursor cleaning can effectively remove the intrinsic oxide on the Ge surface and reduce the EOT of the high-k/Ge gate stack, thereby improving the electrical properties of the device, including the increased dielectric constant and the suppressed leakage current. In spite of the improved electrical performance, the evolution of interface chemistry dielectric properties and the leakage current mechanism of the TMA-passivated HfDyO x /Ge gate stack as functions of the doping concentration and annealing temperature have not been investigated in detail.…”

Interface chemistry and leakage current mechanism of HfGdON/Ge gate stack modulated by ALD-driven interlayer

“…A similar phenomenon has been observed in our previous work. 19 Fig. 2b shows the O 1s core-level spectra of the HfGdON/Ge gate stack with different passivation layers.…”

“…SE is carrier transportation induced by thermionic emission, in which electrons obtain enough energy aer thermal excitation to pass through the metal-dielectric barrier or the dielectric-semiconductor barrier to the dielectric. Based on the SE mechanism, 19 if SE is the dominant mechanism, ln(J/T 2 ) versus the E 1/2 should satisfy a linear relationship. Fig.…”

Модификация Атомной И Электронной Структуры Поверхности Полупроводников А-=sup=-Iii-=/Sup=-В-=sup=-v-=/Sup=- На Границе С Растворами Электролитов О Б З Ор

“…В большинстве реакций атомно-слоевого осаждения используются [321,322]. Следует отметить, что некоторые прекурсоры (например, Al(CH 3 ) 3 ) сами могут удалять оксиды с поверхностей полупроводников A III В V в процессе атомно-слоевого осаждения [327,328]. Тем не менее очень часто используется химическая обработка и пассивация поверхности растворами электролитов [322] (рис.…”