Compare noise characteristic of DC-HEMT and HEMT

Sadeghi, S. M. Mirmohammad; Vadizadeh, Mahdi; Faez, Rahim

doi:10.1109/iraniancee.2013.6599546

Cited by 3 publications

(9 citation statements)

References 16 publications

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“…The structure consists of a 2.5-µm-thick undoped GaN buffer layer, a 21-nm-thick AlGaN bottom barrier layer with the Al composition 6%, a 14-nm-thick GaN channel layers and a 24-nm-thick Al0.3Ga0.7N top barrier layer. In order to optimize the channel electron density and comfort good ohmic contacts the AlGaN schottky layer is selectively doped with Si [2]. Gate-source and gate-drain spacing is equal to 0.5 um, 0.75 um respectively.…”

Section: Device Structuresmentioning

confidence: 99%

“…This is similar to direct generation-recombination noise without a recombination term. The different noise figure models introduced for heterostructure devices.Van der Ziel, Pucel, Fukui and Pospieszalski is the basis model of noise figure for HEMTs [2]. Fukui model is used in this paper for showing microwave noise performance of the proposed structure.…”

Section: Microwave Noise Performancementioning

confidence: 99%

“…Fukui model is used in this paper for showing microwave noise performance of the proposed structure. The noise parameters of this model are [2] (3)…”

Section: Microwave Noise Performancementioning

confidence: 99%

“…For microwave high-power and low noise applications AlGaN/GaN HEMT attracted consideration because of their excellent microwave characteristics, low noise and high power microwave performance and high current drive capability [1]- [2].The main target of novel electronics technology is the fabrication of faster devices with the highest level of power and lowest level of noise figure [3]. Recently, heterostructure devices have provided superior performance than MESFETS.…”

Section: Introductionmentioning

confidence: 99%

“…Recently, heterostructure devices have provided superior performance than MESFETS. Preliminary researches have shown that noise properties of AlGaN/GaN-HEMTs are comparable to those of AlGaAs/GaAs HEMTs [2]. AlGaN/GaN-HEMT with 0.25 um gate-lengh has demonstrated NFmin of 0.77 dB at 5 GHz and NFmin of 1.06 dB at 10 GHz [4].…”

Section: Introductionmentioning

confidence: 99%

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Design And Simulation Noise Characteristics of AlGaN/GaN/AlGaN/GaN HEMT on SIC Substrate For Low Noise Applications

Najmabadi¹,

Kashaniniya²

2016

IOSR

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In this paper, AlGaN/GaN/AlGaN/GaN high electron mobility transistor (HEMT) with 0.25 um gatelength have been designed on an SIC-4H substrate. DC and Noise characteristics of AlGaN/GaN/AlGaN/GaN HEMT with 0.25 um gate-length at microwave frequencies have been explored. The simulation has been performed by using the Silvaco software. The extrinsic transconductance of the device was 350 ms/mm. Also, device exhibited current drive capability as high as 1750 ma/mm. The device has demonstrated high unity current gain cutoff frequency (ft) of 200 GHz. The microwave noise characteristics of the device were determined from 0 to 20 GHz at different drain biases and drain currents. At a gate bias of-3 V and drain bias of 10 V, device exhibited a minimum noise figure (NFmin) of 0.35 dB and maximum associated gain (Gma) of 24.35 dB at 10 GHz. The noise resistance of device is 7.2 ohm at 10 GHz, which is very suitable for low noise applications in X-band frequency range. These results indicates the capability of AlGaN/GaN HEMT for low noise and high power amplifiers.

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Section: Device Structuresmentioning

confidence: 99%

Section: Microwave Noise Performancementioning

confidence: 99%

“…Fukui model is used in this paper for showing microwave noise performance of the proposed structure. The noise parameters of this model are [2] (3)…”

Section: Microwave Noise Performancementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Design And Simulation Noise Characteristics of AlGaN/GaN/AlGaN/GaN HEMT on SIC Substrate For Low Noise Applications

Najmabadi¹,

Kashaniniya²

2016

IOSR

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Noise characterisation of GaN current aperture vertical electron transistor metal‐insulated semiconductor field effect transistor with Δ‐shaped gate for low noise radio frequency amplifiers

Janakiraman

Mohanbabu

Maheswari

et al. 2022

Int J RF Mic Comp-Aid Eng

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In this article, vertical CAVET with boron-doped GaN layer as current blocking layer (CBL) for AlGaN/GaN is proposed in this study, and different electrical characteristics of the devices, such as DC (I ds À V ds ), small-signal radio frequency and high-frequency microwave noise performances, are characterised using Synopsys TCAD simulations. The vertical CAVET AlGaN/GaN metal-insulated semiconductor field effect transistor (MIS-HEMT) has been found to have a high threshold V T = 6.36 V, drain saturation current, I ds,sat = 3.41 kA/cm 2 , reduced OFF-state current <10 À12 and improved high frequency and noise performances. The findings provide insight on noise sources and provide information on how to improve GaN transistor noise performance. Its useful characterisation tool for learning more about the imperfections in advanced AlGaN/GaN MIS-HEMTs and how they evolve. A twoport noise equivalent-circuit description is used to calculate data for noise.Using data from noise and scattering parameters that have been measured, we evaluated the effect of noise sources due to gate and drain, as well as their correlation. The devices exhibit a minimum noise figure (NF min ) and an equivalent noise resistance (R n ) of 1.21 dB and 20 Ω at 20 GHz, with V gs = 5 V and V ds = 10 V, which is small and appropriate for low-noise amplifiers with a wide bandwidth. The maximum output power density P out of 23 dBm and the maximum PAE of 63.3% are achieved for GaN V-shaped CAVET MIS-HEMTs with V ds = 10 V at 3.12 GHz is achieved. A comparison is made between the noise performance of conventional HEMTs, MIS-HEMTs and FETs. The methods for obtaining the noise figure (NF min ) and other noise metrics are then explained and compared with those found in the literature.

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Design and Simulation Noise Characteristics of AlGaN/GaN HEMT on SIC Substrate for Low Noise Applications

Fallahnejad¹,

Kashaniniya²,

Vadizadeh³

2015

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Compare noise characteristic of DC-HEMT and HEMT

Cited by 3 publications

References 16 publications

Design And Simulation Noise Characteristics of AlGaN/GaN/AlGaN/GaN HEMT on SIC Substrate For Low Noise Applications

Design And Simulation Noise Characteristics of AlGaN/GaN/AlGaN/GaN HEMT on SIC Substrate For Low Noise Applications

Noise characterisation of GaN current aperture vertical electron transistor metal‐insulated semiconductor field effect transistor with Δ‐shaped gate for low noise radio frequency amplifiers

Design and Simulation Noise Characteristics of AlGaN/GaN HEMT on SIC Substrate for Low Noise Applications

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