Comparison between n-type and p-type Al/SiNx:H/In0.53Ga0.47As devices deposited by electron cyclotron resonance technique

Blanco, Marcos; Redondo, E.; Mártil, I.; González-Dı́az, G.

doi:10.1088/0268-1242/15/8/307

Cited by 3 publications

(4 citation statements)

References 25 publications

(39 reference statements)

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“…23 Figures 10͑a͒ and 10͑b͒ present both C q and C h C -V curves of SiN x :H/p-In 0.53 Ga 0.47 As and SiN x :H/n-In 0.53 Ga 0. 47 As interfaces, respectively, where the insulator film was deposited with a gas flux ratio of Rϭ5 ͑i.e., xϭ1.5).…”

Section: Alõsin X :Hõin 053 Ga 047 As Devicesmentioning

confidence: 99%

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Rapid thermally annealed plasma deposited SiNx:H thin films: Application to metal–insulator–semiconductor structures with Si, In0.53Ga0.47As, and InP

Mártil

Prado

Andrés

et al. 2003

Journal of Applied Physics

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We present in this article a comprehensive study of rapid thermal annealing ͑RTA͒ effects on the physical properties of SiN x :H thin films deposited by the electron cyclotron resonance plasma method. Films of different as-deposited compositions ͑defined in this article as the nitrogen to silicon ratio, xϭN/Si) were analyzed: from Si-rich (xϭ0.97) to N-rich (xϭ1.6) films. The evolution of the composition, bonding configuration, and paramagnetic defects with the annealing temperature are explained by means of different network bond reactions that take place depending on the as-deposited film composition. All the analyzed films release hydrogen, while Si-rich and near-stoichiometric (xϭ1.43) ones also lose nitrogen upon annealing. These films were used to make Al/SiN x :H/semiconductor devices with Si, In 0.53 Ga 0.47 As, and InP. After RTA treatments, the electrical properties of the three different SiN x :H/semiconductor interfaces can be explained, noting the microstructural modifications that SiN x :H experiences upon annealing.

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Section: Alõsin X :Hõin 053 Ga 047 As Devicesmentioning

confidence: 99%

“…17 In this article, we analyze in detail the influence of the RTA on the physical properties of ECR deposited SiN x :H films in a wide range of compositions-from Si-rich films to N-rich-and analyze the RTA effects on the SiN x :H/semiconductor interface with Si, [19][20][21] In 0.53 Ga 0. 47 As, 22,23 and InP. 24 -27 II.…”

mentioning

confidence: 99%

Rapid thermally annealed plasma deposited SiNx:H thin films: Application to metal–insulator–semiconductor structures with Si, In0.53Ga0.47As, and InP

Mártil

Prado

Andrés

et al. 2003

Journal of Applied Physics

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“…Hence, it is highly desirable to identify also oxygen free dielectrics that provide high quality interfaces with InGaAs. Previous studies of the silicon nitride / n-type InGaAs interface have not demonstrated Fermi level de-pinning (5), and probably due to these unfavorable results this dielectric was abandoned in favor of ALD oxides-based passivation layers. Here, we revisit the Si 3 N 4 / InGaAs interface, and demonstrate that thermal treatment reduces the defect interface traps and that Fermi level de-pinning is achieved.…”

Section: Introductionmentioning

confidence: 98%

Si₃N₄ as a Useful Dielectric for InGaAs MIS Stacks

et al. 2011

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Fully unpinned behavior of the Si3N4 (PECVD)/InGaAs system with Dit ~ 10^12 eV-1 cm-2 was observed after 400C 30 min annealing. No influences of ambient gas treatment conditions or treatment order relative to gate metal deposition on C-V behavior and Dit values were observed. Influence of the annealing temperature on C-V behavior and Dit was explored in the range 300C - 500C. It was found that 400C anneal shows the best C-V behavior and the lowest Dit values for the Si3N4 (PECVD)/InGaAs system. Slightly better results of the accumulation frequency dispersion and flat-band hysteresis were observed for forming gas treatment compared to N2/vacuum anneals.

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“…(iii) Rapid thermal annealing (RTA) treatments of the MIS structure obtained in the two ways described above. This approach has been widely studied by our group in SiN x :H/Si [12,13], SiN x :H/InGaAs [14,15] and SiN x :H/InP [16] structures, where it has been proven that the RTA treatments with temperatures between 500-700 • C, depending on the substrate, improve the whole performance of the devices.…”

Section: Introductionmentioning

confidence: 99%

Improvement of SiN_x:H/InP gate structures for the fabrication of metal insulator semiconductor field-effect transistors

Redondo

Mártil

González-Dı́az³

et al. 2002

Semicond. Sci. Technol.

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In this paper we report on the optimization of the SiN x :H insulator, deposited by the electron cyclotron resonance (ECR) plasma method, as a dielectric for metal-insulator-semiconductor (MIS) structures built on an InP compound semiconductor. Two different MIS structures have been obtained in which the minimum of the interface trap density (D it,min) at the insulator/InP interface attains values of device quality. In the first structure, a Al/SiN 1.5 :H/SiN 1.6 :H/InP dual-layer insulator was obtained and optimized after rapid thermal annealing treatment at 500 • C for 30 s. After this treatment, the value of D it,min was 9 × 10 11 cm −2 eV −1. In the second structure, the MIS structure was Al/SiN 1.6 :H/InP single-layer insulator, in which the InP surface was exposed to an N 2 plasma prior to the SiN 1.6 :H film deposition. In this case, the value of D it,min was 1.6 × 10 12 cm −2 eV −1. Both types of structures were used as gate insulators on N-channel enhanced-mode MIS field-effect transistor test devices. From the dc output characteristics of the transistors, we obtain values for the electron channel mobility in the range 1550-1600 cm 2 V −1 s −1. This is a confirmation of the great potential of the ECR plasma method as a simple way to obtain device quality gate structures on InP without the use of passivation processes of the InP surface prior to the deposition of the gate dielectric, thus simplifying the whole device fabrication procedure.

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Comparison between n-type and p-type Al/SiN_x:H/In_0.53Ga_0.47As devices deposited by electron cyclotron resonance technique

Cited by 3 publications

References 25 publications

Rapid thermally annealed plasma deposited SiNx:H thin films: Application to metal–insulator–semiconductor structures with Si, In0.53Ga0.47As, and InP

Rapid thermally annealed plasma deposited SiNx:H thin films: Application to metal–insulator–semiconductor structures with Si, In0.53Ga0.47As, and InP

Si₃N₄ as a Useful Dielectric for InGaAs MIS Stacks

Improvement of SiN_x:H/InP gate structures for the fabrication of metal insulator semiconductor field-effect transistors

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Comparison between n-type and p-type Al/SiNx:H/In0.53Ga0.47As devices deposited by electron cyclotron resonance technique

Cited by 3 publications

References 25 publications

Rapid thermally annealed plasma deposited SiNx:H thin films: Application to metal–insulator–semiconductor structures with Si, In0.53Ga0.47As, and InP

Rapid thermally annealed plasma deposited SiNx:H thin films: Application to metal–insulator–semiconductor structures with Si, In0.53Ga0.47As, and InP

Si3N4 as a Useful Dielectric for InGaAs MIS Stacks

Improvement of SiNx:H/InP gate structures for the fabrication of metal insulator semiconductor field-effect transistors

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Comparison between n-type and p-type Al/SiN_x:H/In_0.53Ga_0.47As devices deposited by electron cyclotron resonance technique

Si₃N₄ as a Useful Dielectric for InGaAs MIS Stacks

Improvement of SiN_x:H/InP gate structures for the fabrication of metal insulator semiconductor field-effect transistors