Comparison Between Single Shot Micromachining of Silicon With Nanosecond Pulse Shaped IR Fiber Laser and DPSS UV Laser

Abstract

High power DPSS UV lasers having high repetition rates (>100 kHz) are significant part of the cost of a laser Si microprocessing system. An alternative inexpensive solution, MOPA based IR fiber lasers, have been used to machine Si with high energy shaped pulses. This investigation evaluates the single pulse machining performance of a pulse shapeable IR (1062 nm) fiber laser and a DPSS UV (355 nm) laser on Si substrates and directly compares their performance. The machined depth data was measured with a white light interferometer and the finishing quality examined for surface defects with a SEM. Theoretical analysis demonstrated rapid heating effects by taking account of the dynamic optical and thermal properties of Si for given IR laser shaped pulses. The results show that high quality Si surface micro-processing can benefit from using the more flexible, more reliable, and pulse shapeable IR fiber laser at high repetition rates which no conventional solid state IR or UV laser could achieve.

Nanosecond laser ablation of Si(111) under an aqueous medium

“…8. Comparable depths were obtained by the other researchers [6,12] for similar laser wavelengths and pulse durations. We think that the energy is confined to interface of surface of Si(111) sample and liquid for aqueous environment and this liquid behaves as a cooling medium also.…”

“…As a semiconductor material, Silicon (Si) has always been used in microelectronics, sensors, solar cell technology and biotechnological applications [11]. In order to open insight to new technologies or miniaturize and increase the performance of Si based devices, patterning their surfaces at micrometer scales are quite important [12][13][14][15]. Moreover, better precision of such structures is an important requirement in laser-based fabrication processes [16,17].…”

Magneto-absorption effects in magnetic-field assisted laser ablation of silicon by UV nanosecond pulses

“…3), which was close to the ablation threshold (threshold fluence 1.17 J/cm 2 ; threshold irradiance 55.15 MW/cm 2 ) with the given laser parameters. 24,25 One of the grooves was made under no magnetic field (depth 0.142 lm, Fig. 3(a)), another under 0.341 T magnetic field directed toward the surface (depth 9.76 lm, Fig.…”

Graphene Oxide for Integrated Photonics and Flat Optics

“…[ 78,79 ] Although GO has shown relatively weak SA compared to graphene, many passively mode‐locked fiber lasers incorporating GO films have been realized by taking advantage of the solvent dispersibility and chemical reduction of GO. [ 174–177 ] Implementing SA‐based devices in integrated platforms is a powerful method to achieve critical nonlinear elements for advanced photonic integrated circuits including integrated mode‐locked lasers, [ 178 ] broadband ultrafast all‐optical modulators, [ 179 ] and photonic neural networks. [ 180 ]…”