Comparison of F2 plasma chemistries for deep etching of SiC

Leerungnawarat, P.; Lee, K. P.; Pearton, S. J.; Ren, Fangfang; Chu, S. N. G.

doi:10.1007/s11664-001-0016-0

Cited by 21 publications

(7 citation statements)

References 24 publications

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“…Dry etching techniques have been used to pattern SiC films because conventional wet-chemical etching is not straightforward due to the chemical inertness of SiC and due to the high-bond energies existing between silicon and carbon (only molten potassium hydroxide (KOH) at high temperature is known 3 ). Plasma-based etching of SiC in reactive ion etching (RIE), 2,3 electron cyclotron resonance, 4 and inductively coupled plasma (ICP) [5][6][7][8][9][10] has been investigated by several authors. Among these dry etching techniques, ICP is preferable because RIE at high-ion energies increases mask erosion and residual lattice damage in the semiconductor, 5 and these plasma chemistries cause a micromasking problem when aluminum is used as an etch mask.…”

Section: Introductionmentioning

confidence: 99%

Ohmic contact formation on inductively coupled plasma etched 4H-silicon carbide

Lee

Koo

Zetterling

et al. 2002

Journal of Elec Materi

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Section: Introductionmentioning

confidence: 99%

Ohmic contact formation on inductively coupled plasma etched 4H-silicon carbide

Lee

Koo

Zetterling

et al. 2002

Journal of Elec Materi

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“…Ti is eroded by the stepwise increase in the number of F-atoms associated with Ti. 5 However, all these products require significantly less energy to be volatilized compared to TiF 4 : BP(SiF 4 ) ¼ À86 C, BP(CO) ¼ À192 C, BP(CO 2 ) ¼ À79 C. 42 This explains why, for particular plasma operating conditions, the same amount of energy deposited at the film surface can remove significantly more OSG than Ti. 41 The required energy can be expressed in terms of the boiling point (BP) of TiF 4 (BP ¼ 284 C).…”

Section: B Differences In Ti and Osg Erosion And Selectivitymentioning

confidence: 99%

Study of Ti etching and selectivity mechanism in fluorocarbon plasmas for dielectric etch

Weilnboeck

Bartis

Shachar

et al. 2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Articles you may be interested inDifferences in erosion mechanism and selectivity between Ti and TiN in fluorocarbon plasmas for dielectric etch A model for Si, SiCH, Si O 2 , SiOCH, and porous SiOCH etch rate calculation in inductively coupled fluorocarbon plasma with a pulsed bias: Importance of the fluorocarbon layerThe authors studied the behavior of Ti hardmasks in CF 4 /Ar and C 4 F 8 /Ar discharges using conditions relevant to pattern transfer processes into organosilicate glass (OSG), a reference low-k material investigated in parallel. The authors examined various material erosion stages and determined the dependencies of etch rates (ERs) and etching selectivities (ESs) on the following plasma parameters: self-bias voltage (50-150 V), processing pressure (20-60 mTorr) and %CF 4 (10-30 %) in CF 4 /Ar discharges, and O 2 addition (0-10 %) and N 2 addition (0-20 %) to C 4 F 8 /Ar discharges. Erosion behavior and ERs were characterized by real-time ellipsometric measurements and multilayer optical modeling. These measurements were complemented by x ray photoelectron spectroscopy to study the surface composition. The impact of plasma parameter changes were investigated by comparing ERs and corresponding ESs (OSG ER/Ti ER). During the erosion of Ti, the initially oxidized film surface was transformed into a TiF x layer (x $ 3) covered by a FC film. The FC film thickness strongly depended on the FC feed gas and was significantly thicker for the C 4 F 8 -based etch (1.5 nm) than for the CF 4 -based etch (0.9 nm). Ti erosion was found to be dependent on the energy deposited on the film surface by ion bombardment and to exponentially decrease with increasing FC film thicknesses. For thin FC films (< 1 nm), erosion was ion driven, i.e., "chemical sputtering", and, for thick FC films (> 1 nm), erosion was limited by the amount of F that could diffuse through the FC layer to the Ti interface. In contrast to organic masking materials, Ti hardmasks have lower ESs for the more polymerizing C 4 F 8 -based discharges than for CF 4 -based discharges. This can be explained by the consumption of the limited supply of F at the OSG surface by C and H impurities, which form volatile CF 4 and HF etch products. For thin FC films and low ion energy deposition by ion bombardment, ESs up to 15 have been achieved.

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“…[1][2][3][4] Etching gases including fluorine, such as SF 6 , NF 3 , BF 3 , and CF 4 , have been used in the dry etching of SiC. [5][6][7][8][9][10][11] However, the global warming potentials (GWPs) of these gases are large. The GWPs of SF 6 and C x F y are on the orders of 10 4 and 10 3 , respectively.…”

Section: Introductionmentioning

confidence: 99%

Dry etching of SiC using Ar/F₂plasma and XeF₂plasma

Matsutani

Koyama

2015

Jpn. J. Appl. Phys.

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We investigated the SiC dry etching process using Ar/F2 plasma and XeF2 plasma. We carried out optical observation of Ar/F2 plasma and XeF2 plasma. The dominant etching species were different between Ar/F2 plasma and XeF2 plasma. The etching rates of SiC were approximately 100 nm/min at 25 sccm and 200 W for Ar/F2 plasma and 45 nm/min at 2.5 sccm and 100 W for XeF2 plasma. Vertical etching profiles and a smooth etched surface were obtained. The average roughness of the etched bottom surface was 1 nm, which satisfied the requirements for optical device fabrication. We believe that the proposed etching process using F2 of zero-global-warming-potential gases is very simple and useful for fabricating optical devices and micro-electromechanical systems (MEMSs).

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Comparison of F2 plasma chemistries for deep etching of SiC

Cited by 21 publications

References 24 publications

Ohmic contact formation on inductively coupled plasma etched 4H-silicon carbide

Ohmic contact formation on inductively coupled plasma etched 4H-silicon carbide

Study of Ti etching and selectivity mechanism in fluorocarbon plasmas for dielectric etch

Dry etching of SiC using Ar/F₂plasma and XeF₂plasma

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Comparison of F2 plasma chemistries for deep etching of SiC

Cited by 21 publications

References 24 publications

Ohmic contact formation on inductively coupled plasma etched 4H-silicon carbide

Ohmic contact formation on inductively coupled plasma etched 4H-silicon carbide

Study of Ti etching and selectivity mechanism in fluorocarbon plasmas for dielectric etch

Dry etching of SiC using Ar/F2plasma and XeF2plasma

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Dry etching of SiC using Ar/F₂plasma and XeF₂plasma