Comparison of graphene growth on arbitrary non-catalytic substrates using low-temperature PECVD

Chugh, Sunny; Mehta, R. R.; Lü, Ning; Dios, Francis de; Kim, Moon J.; Chen, Zhihong

doi:10.1016/j.carbon.2015.05.035

Cited by 76 publications

(54 citation statements)

References 30 publications

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“…26 Several PECVD studies have been reported on SiO 2 , 27-38 quartz, 27,31,38 glass, 34,39 and Al 2 O 3 28,38 to explore the synthesis of graphene without metal catalysts at low temperature. Successful enlargement of isolated grain sizes has been realized using twostep growth in PECVD process.…”

Section: -24mentioning

confidence: 99%

“…[28][29][30] Other groups tried to grow continuous graphene using PECVD. However, these lms suffered from common problems such as many defects, less surface uniformity, [31][32][33][34][35][36][37][38][39] and three-dimensional (3D) nanowall growth. 31,34,37,40 All these drawbacks have limited graphene from fullling its excellent electrical properties and developing its advantage of atomic thickness.…”

Section: -24mentioning

confidence: 99%

“…However, these lms suffered from common problems such as many defects, less surface uniformity, [31][32][33][34][35][36][37][38][39] and three-dimensional (3D) nanowall growth. 31,34,37,40 All these drawbacks have limited graphene from fullling its excellent electrical properties and developing its advantage of atomic thickness. Therefore, a continuous, uniform, and two-dimensional graphene lm with a low defect density is desirable, which can enable graphene integrated with the modern silicon electronics as well as other two-dimensional materials like transition metal dichalcogenides.…”

Section: -24mentioning

confidence: 99%

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Metal-catalyst-free growth of graphene on insulating substrates by ammonia-assisted microwave plasma-enhanced chemical vapor deposition

Zheng

Zhong

et al. 2017

RSC Adv.

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We study the metal-catalyst-free growth of uniform and continuous graphene films on different insulating substrates by microwave plasma-enhanced chemical vapor deposition (PECVD) with a gas mixture of C 2 H 2 , NH 3 , and H 2 at a relatively low temperature of 700-750 C. Compared to growth using only C 2 H 2 and H 2 , the use of NH 3 during synthesis is found to be beneficial, in transforming vertical graphene nano-walls into a layer-by-layer film, reducing the density of defects, and improving the graphene quality. The effect of different insulating substrates (including Al 2 O 3 and SiO 2 ) on the growth of graphene was studied under different growth temperatures, implying that the growth-temperature window and catalytic effect vary among insulators. The low activation energy barrier of Al 2 O 3 proves it to be a more suitable substrate for the metal-catalyst-free growth of graphene at low temperature. These directly grown graphene films on insulators can be conveniently integrated into various electronic and optoelectronic applications avoiding any post-growth transfer processes.

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Section: -24mentioning

confidence: 99%

Section: -24mentioning

confidence: 99%

Section: -24mentioning

confidence: 99%

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Metal-catalyst-free growth of graphene on insulating substrates by ammonia-assisted microwave plasma-enhanced chemical vapor deposition

Zheng

Zhong

et al. 2017

RSC Adv.

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“…Compared with the Fabry-Perot resonator without graphene, the graphene coating allows more light confined by the cladding leaking into the surrounding medium, and then the distribution of the evanescent field and spectral properties can be obviously modulated [25]. The graphene was grown on fibers by using radio-frequency plasma enhanced chemical vapor deposition technique (RF-PECVD) [31][32]. As shown in Fig.…”

Section: Device Design and Preparationmentioning

confidence: 99%

Ultrasensitive sensing in air based on graphene-coated hollow core fibers

et al. 2018

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The mismatching between permittivities of guided mode and air limits the operation of accurately monitoring the change in the refractive index of the surrounding air. To solve it, we propose a platform using a hollow core fiber with the integration of graphene coating. Experimental results demonstrate that the anti-resonant reflecting guidance has been enhanced while it induces sharply and periodically lossy dips in the transmission spectrum. We conclude a sensitivity of -365.9 dB/RIU and a high detection limit of 2.73 × 10 RIU by means of interrogating the intensity of the lossy dips. We believe that this configuration opens a direction for highly sensitive sensing in researches of chemistry, medicine, and biology.

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“…Actually, an often adopted approach to synthesize graphene on dielectric substrates is to prepare graphene layers by chemical vapor deposition exploiting metal films catalysts (such as Cu, Ni, Ru, or Co), with successive transfer of these layers on the insulating dielectric. Synthesis of few graphene layers on SiO

_{2}

has been obtained by means of transfer‐free and catalysts‐free procedures.…”

Section: Introductionmentioning

confidence: 99%

Graphene on clean (0001) α-quartz: Numerical determination of a minimum energy path from metal to semiconductor

Colle

Menichetti

Grosso

2016

Phys. Status Solidi B

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By means of DFT calculations, we have individuated a minimum-energy path connecting two energy minima of clean graphene on clean and relaxed oxygen-terminated (0001)’SiOinline image substrate in the inline image-quartz configuration: one characterized by mutual graphene–SiOinline image substrate distance of inline image2.8 Å and weak (van der Waals) bonds between them, the other by mutual distance of inline image1.4 Å, and presence of strong covalent C–O bonds. Our calculations show that the pathway connecting the two minima goes through a transition state and that the two minima are separated by a barrier of inline image2.25 eV. The covalent C–O bonds, which characterize the lower-energy configuration, induce significant corrugation of the graphene overlayer with consequent important modification of its electronic band structure and transport properties. In particular, we show that a small gap (inline imageeV) opens in the electronic band structure of the graphene/SiOinline image system, and the conical features around the Dirac points are lost. Correspondingly, at the graphene/SiOinline image interface, the diffuse inline image conjugation of the isolated graphene layer is modified by the appearance of near’inline image carbon atoms bound to the top oxygens of the SiOinline image. This fact also affects conductances and I–V characteristics which become different along different cell directions of the graphene overlayer. Our analysis suggests that the energy barrier between the van der Waals and the covalent minima could be overcome by applying a uniform pressure on the graphene overlayer due to the formation of chemical bonds which are important for the experimental integration of graphene on Si-compatible technology

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Comparison of graphene growth on arbitrary non-catalytic substrates using low-temperature PECVD

Cited by 76 publications

References 30 publications

Metal-catalyst-free growth of graphene on insulating substrates by ammonia-assisted microwave plasma-enhanced chemical vapor deposition

Metal-catalyst-free growth of graphene on insulating substrates by ammonia-assisted microwave plasma-enhanced chemical vapor deposition

Ultrasensitive sensing in air based on graphene-coated hollow core fibers

Graphene on clean (0001) α-quartz: Numerical determination of a minimum energy path from metal to semiconductor

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