Comparison of HfAlO, HfO2/Al2O3, and HfO2 on n-type GaAs using atomic layer deposition

Lu, Bin; Lv, Hongliang; Zhang, Yuming; Zhang, Yimen; Liu, Chen

doi:10.1016/j.spmi.2016.07.032

Cited by 15 publications

(11 citation statements)

References 7 publications

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“…In a nanolaminate film at the time of Al 2 O 3 ALD deposition, there is an excess of the TMA precursor after surface hydroxyl group elimination; it reduces the additional species, which are either out-diffused through HfO 2 or remotely produced at the deposition surface . The extracted N bt and D it values are within the same range as or lower than the reported values. ,,, …”

Section: Resultsmentioning

confidence: 52%

“…Among the high- k dielectrics, Al 2 O 3 , HfO 2 , La 2 O 3 , ZrO 2 , and TiO 2 oxides have been studied, although no single dielectric is a clear leading contender. − However, both Al 2 O 3 and HfO 2 are quite attractive due to their facile fabrication by atomic-layer deposition (ALD). Even though Al 2 O 3 has a comparatively large band gap (∼8.8 eV), good interfacial boundary with a self-cleaning effect, high thermal stability, and fewer active electrical defects, Al 2 O 3 , suffers from a moderate dielectric constant ( k = 6–9) .…”

Section: Introductionmentioning

confidence: 99%

“…Even though Al 2 O 3 has a comparatively large band gap (∼8.8 eV), good interfacial boundary with a self-cleaning effect, high thermal stability, and fewer active electrical defects, Al 2 O 3 , suffers from a moderate dielectric constant ( k = 6–9) . On the other hand, even though HfO 2 has the advantages of a higher dielectric constant ( k = 20–25) and moderate band gap (∼5.7 eV), it has several shortcomings such as lower thermal and interfacial stabilities, larger hysteresis, and higher leakage tendency as well as suffering from more active electrical traps. , As a trade-off of these issues, Al 2 O 3 has been combined with HfO 2 in the form of a bilayer (HfO 2 /Al 2 O 3 ), where the oxides are introduced as alternating sublayers and another is the nanolaminate form of HfAlO, where the oxides are homogeneously mixed . It has already been reported that these formations have better thermal stability than pristine HfO 2 , , and the nanolaminate structures have fewer active electrical defects as well as a lower leakage density …”

Section: Introductionmentioning

confidence: 99%

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Trap Characterization of Atomic-Layer-Deposited Al-Incorporated HfO₂ Films on In_0.53Ga_0.47As

Rahman

Kim

2021

ACS Appl. Electron. Mater.

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This study reports on the interface and border trap characterization of HfO 2 films by incorporating Al 2 O 3 via atomiclayer deposition (ALD) in several deposition ratios. Al incorporation lowers the dielectric constant (k) of the HfO 2 film and reduces the frequency dispersion while providing a positive shift in the flat band voltage. X-ray photoelectron spectroscopy (XPS) analysis has validated the microstructural bonding formation, and a combination of XPS and reflected electron energy loss spectroscopy (REELS) was used to characterize the band structures of the films. The energy band gap (E g ) and barrier heights (E c and E v ) showed an increase with increasing amount of Al in the deposited films. Al 2 O 3 incorporation helps achieve better passivation than pure HfO 2 and provides pinhole-free condensed film growth, which is justified as a reduction in trap density. The reduction of the traps and band gap enlargement helps to obtain a lower leakage current density.

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Section: Resultsmentioning

confidence: 52%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Trap Characterization of Atomic-Layer-Deposited Al-Incorporated HfO₂ Films on In_0.53Ga_0.47As

Rahman

Kim

2021

ACS Appl. Electron. Mater.

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“…When Al is added to HfO 2 dielectrics, Hf atom is substituted by an Al atom forming the defect (Al Hf = Al − Hf ) [83]. Interstitial Al defect can be written by (Table VI) [84].…”

Section: Al-dopingmentioning

confidence: 99%

Hf-Based High-κ Dielectrics: A Review

KOL

Oral

2019

Acta Phys. Pol. A

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In the last decades, the number of transistors per chip with integrated circuits has increased leading to reduction in the thickness of silicon dioxide used as gate dielectrics. However, at small dielectric thicknesses leakage current formation has begun due to the quantum tunneling effect. Thus, it became essential to replace SiO2 with alternative dielectrics with high dielectric constant to maintain the same capacitance at higher gate dielectric thicknesses. This review analyzes alternative high-κ dielectric materials substituting for SiO2. For this reason, the properties of materials with high dielectric constant are compared to SiO2 with a special emphasis on HfO2, since it is the most promising high-κ dielectric to replace SiO2. The fundamental points concerning HfO2 gate dielectrics are their high dielectric constant and their thermodynamic stability when in contact with Si. In this article, properties of HfO2 fabricated with different coating methods and doped with different elements such as N, Si, Al, Ti and Ta have been compared and discussed. In the conclusion part, we have summarized the results of characterization obtained by X-ray diffraction, scanning electron microscopy, leakage current density-voltage (J-V ), capacitance-voltage (C-V ) and UV-vis spectroscopy of HfO2 thin films.

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“…Al incorporation also increases the dielectric constant and band gap while reducing hysteresis and electrical defects [13,17,18]. In addition, incorporation of Al in alloy form (HfAlO) provides better EOT scaling, lower interface state density (D it ), and a diminished gate leakage current in comparison to the bilayer arrangement [19,20]. As a result, HfAlO has potential benefits, including simultaneous lower interface state density and EOT scaling.…”

Section: Introductionmentioning

confidence: 99%

Characterization of Al Incorporation into HfO2 Dielectric by Atomic Layer Deposition

Rahman

Kim

et al. 2019

Micromachines

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This study presents the characteristics of HfAlO films for a series of Al incorporation ratios into a HfO2 dielectric by atomic layer deposition on a Si substrate. A small amount of Al doping into the HfO2 film can stabilize the tetragonal phase of the HfO2, which helps to achieve a higher dielectric constant (k) and lower leakage current density, as well as a higher breakdown voltage than HfO2 film on its own. Moreover, assimilation of Al2O3 into HfO2 can reduce the hysteresis width and frequency dispersion. These are indications of border trap reduction, which was also verified by the border trap extraction mechanism. X-ray photoelectron spectroscopy (XPS) analysis also verified the HfAlO microstructural properties for various Al compositions. In addition, higher amounts of Al2O3 in HfAlO resulted in better interface and dielectric behavior through trap minimization, although the equivalent-oxide-thickness (EOT) values show the opposite trend.

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Comparison of HfAlO, HfO2/Al2O3, and HfO2 on n-type GaAs using atomic layer deposition

Cited by 15 publications

References 7 publications

Trap Characterization of Atomic-Layer-Deposited Al-Incorporated HfO₂ Films on In_0.53Ga_0.47As

Trap Characterization of Atomic-Layer-Deposited Al-Incorporated HfO₂ Films on In_0.53Ga_0.47As

Hf-Based High-κ Dielectrics: A Review

Characterization of Al Incorporation into HfO2 Dielectric by Atomic Layer Deposition

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Comparison of HfAlO, HfO2/Al2O3, and HfO2 on n-type GaAs using atomic layer deposition

Cited by 15 publications

References 7 publications

Trap Characterization of Atomic-Layer-Deposited Al-Incorporated HfO2 Films on In0.53Ga0.47As

Trap Characterization of Atomic-Layer-Deposited Al-Incorporated HfO2 Films on In0.53Ga0.47As

Hf-Based High-κ Dielectrics: A Review

Characterization of Al Incorporation into HfO2 Dielectric by Atomic Layer Deposition

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Trap Characterization of Atomic-Layer-Deposited Al-Incorporated HfO₂ Films on In_0.53Ga_0.47As

Trap Characterization of Atomic-Layer-Deposited Al-Incorporated HfO₂ Films on In_0.53Ga_0.47As