Comparison of lateral and vertical DMOS specific on-resistance

Amato, Mariana; Rumennik, V.

doi:10.1109/iedm.1985.191081

Cited by 26 publications

(9 citation statements)

References 5 publications

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“…Plotting RONSP versus VBK gives a theoretical BFOM limit for a particular material technology. We report an RONSP of 4.86 mΩ·cm 2 by normalizing measured RON (at VGS = 0) multiplied by the device area (LSD·WG) according to Amato [14]. The results are plotted for the maximum observed blocking voltage at VGD = -230 V in Fig.…”

Section: Benchmarkingmentioning

confidence: 98%

3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math> </inline-formula>-Ga₂O₃MOSFETs

Green

Chabak

Heller

et al. 2016

IEEE Electron Device Lett.

504

187

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A Sn-doped (100) β-Ga2O3 epitaxial layer was grown via metal-organic vapor phase epitaxy (MOVPE) onto a singlecrystal, Mg-doped semi-insulating (100) β-Ga2O3 substrate. Ga2O3-based Metal-Oxide-Semiconductor Field effect Transistors (MOSFETs) with a 2 µm gate length (LG), 3.4 µm source-drain spacing (LSD) and 0.6 µm gate-drain spacing (LGD) were fabricated and characterized. Devices were observed to hold a gate-to-drain voltage of 230 V in the off-state. The gate-to-drain electric field corresponds to 3.8 MV/cm, which is the highest reported for any transistor and surpassing bulk GaN and SiC theoretical limits. Further performance projections are made based on layout, process, and material optimizations to be considered in future iterations.

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Section: Benchmarkingmentioning

confidence: 98%

3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math> </inline-formula>-Ga₂O₃MOSFETs

Green

Chabak

Heller

et al. 2016

IEEE Electron Device Lett.

504

187

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“…Since high step-down ratio converters include quite a wide range of input voltage, and may adopt various topologies, process and operation frequency, we choose several non-isolated converters and engage a figure-of-merit (FOM) for step-down ratio to give more uniform comparison, as shown in (12), which is reported in [23] and can offer trade-off between Table 2 shows a comparison with prior arts [17][18][19][20]. It can be observed that new complex topologies have advantages to achieve high efficiency, especially with high switching frequency, because multiple power switches can reduce switching loss caused by high V IN .…”

Section: Resultsmentioning

confidence: 99%

Fully integrated high‐efficiency high step‐down ratio DC–DC buck converter with predictive over‐current protection scheme

Wang¹,

Zhao²,

Wu³

et al. 2017

IET Power Electronics

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A high-efficiency fully integrated 36 V-3 A stepping down DC-DC converter with high step-down ratio and predictive over-current protection scheme is introduced. To achieve high-voltage conversion ratio, emulated current mode and dedicated current sensing circuits were involved. A novel predictive over-current scheme is proposed to overcome inherent lack of emulated current-mode control and provide fast response to over-current events. In addition, due to N-type field effect transistor (NFET) was adopted to improve efficiency, a floating rail regulator is presented to generate bootstrapped voltage for driver stage. The proposed converter was simulated and fabricated in 0.18 μm bipolar-complementary metal-oxide-semiconductor (MOS)-double-diffused MOS process. Experimental results show the features work well, and with 35 ns minimum on-time, this converter can convert up to 36 V input voltage to 1.8 V at 1 MHz switching frequency with single stage and compact solution. Measured peak efficiency is 89.5% and over 80% efficiency for 3 A output current is realised as well.

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“…Except for relatively low breakdown voltage devices (BV<100V), the specific on-resistance of the power LDMOSFET is mainly determined by the drift region resistance [1], which is given by…”

Section: Specific On-resistance(r On )mentioning

confidence: 99%

“…These endow it integration with low voltage control circuits. Two types of DMOSFET are presently in use: VDMOSFET (Vertical Double-diffused MOSFET: VDMOS) utilizing both sides of the chip, and LDMOSFET(Lateral Double-diffused MOSFET: LDMOS) that have electrodes located only on the top of the chip similarly with conventional MOSFET [1]. From this point of view, a LDMOSFET is more compatible with low voltage CMOS/BiCMOS process than a DMOSFET.…”

Section: Introductionmentioning

confidence: 99%

Analysis of the electrical characteristics of LDMOSFET under various temperature

Son

Yuk

Lee

et al. 2007

TENCON 2007 - 2007 IEEE Region 10 Conference

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In this paper, we have investigated the electrical characteristics of power LDMOSFETs having different gate lengths(2.1 ㎛ -3 ㎛). in the temperature range of 100 K -500K. The specific on-resistance and the off-state breakdown voltage increase with temperature. The result shows that the specific onresistance increases exponentially with the exponent of 2.2 and, by contrast, the off-state breakdown voltage increases linearly with a slope of 100 mV/K (Drift region concentration of measured device: 2 X 10 15 cm -3 ). As a result, Ron/BV, known for a figure of merit of power device, increases with temperature.

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Comparison of lateral and vertical DMOS specific on-resistance

Cited by 26 publications

References 5 publications

3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math> </inline-formula>-Ga₂O₃MOSFETs

3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math> </inline-formula>-Ga₂O₃MOSFETs

Fully integrated high‐efficiency high step‐down ratio DC–DC buck converter with predictive over‐current protection scheme

Analysis of the electrical characteristics of LDMOSFET under various temperature

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Comparison of lateral and vertical DMOS specific on-resistance

Cited by 26 publications

References 5 publications

3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math> </inline-formula>-Ga2O3MOSFETs

3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math> </inline-formula>-Ga2O3MOSFETs

Fully integrated high‐efficiency high step‐down ratio DC–DC buck converter with predictive over‐current protection scheme

Analysis of the electrical characteristics of LDMOSFET under various temperature

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Product

Resources

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3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math> </inline-formula>-Ga₂O₃MOSFETs

3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math> </inline-formula>-Ga₂O₃MOSFETs