No abstract

No abstract

The switching speed of the Lateral Insulated Gate Transistor (LIGT) is slow compared to that of similar LDMOS power devices.The LIGT described in this paper, however, is designed to have both fast switching and high current conduction. The speed improvement is achieved by using a modified LIGT structure, where an additional n+ region is added to the p+ injector. The turn-off time of this modified LIGT is less than 450 nanoseconds, while turn-on is under 100 nanoseconds. Computer simulation is used t o understand the role of the shorted anode in improving the switching speed of the LIGT. A comparison with fabricated devices is shown to be in good qualitative agreement.

No abstract

Articles you may be interested inA transmission electron microscope investigation of the dose dependence of the microstructure of siliconon insulator structures formed by nitrogen implantation of silicon J. Appl. Phys. 69, 3503 (1991); 10.1063/1.348491 Formation of buried nitride silicononinsulator structures studied by Auger electron spectroscopy and transmission electron microscopy High resolution transmission electron microscopy of silicononinsulator formed by high dose oxygen implantation Appl. Phys. Lett. 50, 152 (1987); 10.1063/1.97645 Behavior of dopant diffusion in a silicononinsulator structure formed by highdose oxygen implantation