Comparison of Linearity and Intermodulation Distortion Metrics for T - and Pi - Gate HEMT

Sehra, Khushwant; Kumari, Vandana; Nath, Vandana; Gupta, Mridula; Rawal, D. S.; Saxena, Manoj

doi:10.1109/upcon47278.2019.8980221

Cited by 8 publications

(4 citation statements)

References 42 publications

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“…Where, f corresponds to the frequency of operation, f T is the cut off frequency of the device, I opt is the optimum drain current (in Amperes) for minimum noise operation, E c is the critical field (in MV/cm), R G and R S are the gate and source resistances (in Ω) respectively. Due to the increased fringing fields contributing to an increased parasitic capacitance in π -Gate [36][37][38], and due to the increased gate resistance as a courtesy of 40 nm spacer layer present between the 'π' architecture legs, the said architecture exhibits degraded NF min in comparison to the T -Gate counterpart. Further, the cut off frequency of the device depends upon the gate feedback capacitance (f T ≈ g m /2πC gg ) and therefore has a major effect on the NF min metrics.…”

Section: Resultsmentioning

confidence: 99%

“…The author further studies the RF performance of the said device architecture in an asymmetric modification under Class AB operation and concludes that the device demonstrates reliable operation against the hot electron effect with modest tradeoffs on the device performance. The study was further extended by Sehra et al [37][38] to investigate the device performance at higher frequency with regard to the device linearity and its response in presence of the unwanted harmonics that may distort the signal transfer. It was observed that the π -Gate architecture is capable in exhibiting a highly linear operation and shows suppressed response to intermodulation distortion which further suggests the suitability of the said architecture for low noise applications.…”

Section: Introductionmentioning

confidence: 99%

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Optimization of π – Gate AlGaN/AlN/GaN HEMTs for Low Noise and High Gain Applications

Sehra

Kumari

Gupta

et al. 2020

Silicon

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This paper presents a comprehensive TCAD based assessment to evaluate the intrinsic gain and minimum noise figure metrics of the T -Gate, and the π -Gate AlGaN/AlN/GaN HEMTs along with their recessed architectures. The work presented in this paper, to the best of author's knowledge, is first in its attempt to systematically bring out both the effect of minimum noise figure metrics and intrinsic gain at the device level for the π -Gate architecture and their recessed counterparts whilst evaluating its stability for high frequency operations. Comparison demonstrates an enhancement in intrinsic gain by 64.5% in case of asymmetric π -Gate and 77% for asymmetric recessed π -Gate in comparison to their T -Gate counterparts. Further, the said architectures possess a wider range of flat gain operation with suppressed values of minimum noise figure metrics. These modifications result in a modest trade off in the minimum noise figures when best case is considered and compared with their T -Gate counterparts. Additionally, it is also demonstrated that such device architectures demonstrate much stable high frequency operation in comparison to their primer. The results so presented establish the superiority of the π -Gate AlGaN/ AlN/GaN HEMTs for low noise and high gain applications.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Optimization of π – Gate AlGaN/AlN/GaN HEMTs for Low Noise and High Gain Applications

Sehra

Kumari

Gupta

et al. 2020

Silicon

Self Cite

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“…The group reports that the π-shaped gate modifies the electric field in the channel in the form of two steps that allow the electrons to thermalize and lose energy, thereby bringing down the overall temperature of the device. Sehra et al [25,26] extended the study to test the reliability, linearity, and intermodulation distortion metrics of the proposed device architecture.…”

Section: Introductionmentioning

confidence: 99%

Impact of heavy ion particle strike induced single event transients on conventional and π – Gate AlGaN/GaN HEMTs

Sehra

Kumari

Gupta

et al. 2021

Semicond. Sci. Technol.

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This paper presents an extensive Victory TCAD based assessment to evaluate the device performance under heavy ion particle strike induced single event effects (SEEs). The impact of SEEs on π-shaped AlGaN/GaN HEMT architecture has been compared with conventional AlGaN/GaN HEMT. For validation of simulation, models have been calibrated against the experimental data of in-house fabricated GaN HEMTs on SiC wafers, after which π-shaped architecture is realized using Silvaco's Victory Process simulation tools. Comparisons demonstrate that π-Gate HEMT architecture is a SEE hardened device under different heavy ion particle strike conditions. Further, due to the step modification in the electric field itself, the π-Gate HEMT also exhibits SEE hardened operation under different ambient temperatures. The effect of angled heavy ion particle strike has also been studied for evaluating the device performance with regards to SEE.

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“…A novel Π-gate architecture was presented by Alvaro et al, 14 which is proved to have a better thermal and reliable RF performance. Detailed analysis on the various prospects and optimization of Π-gate design was presented by Sehra et al [15][16][17] However, the greatest challenge in the device design and optimization is the convergence complexity and time requirements during simulation and parameter extraction when dealing with conventional TCAD tools.…”

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confidence: 99%

Multilayer perceptron–random forest based hybrid machine learning–neural network model for GaN high electron mobility transistor's parameter estimations

Mishra

Raut

Sehra

et al. 2022

Int J RF Mic Comp-Aid Eng

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Comparison of Linearity and Intermodulation Distortion Metrics for T - and Pi - Gate HEMT

Cited by 8 publications

References 42 publications

Optimization of π – Gate AlGaN/AlN/GaN HEMTs for Low Noise and High Gain Applications

Optimization of π – Gate AlGaN/AlN/GaN HEMTs for Low Noise and High Gain Applications

Impact of heavy ion particle strike induced single event transients on conventional and π – Gate AlGaN/GaN HEMTs

Multilayer perceptron–random forest based hybrid machine learning–neural network model for GaN high electron mobility transistor's parameter estimations

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