Comparison of nickel, cobalt, palladium, and tungsten Schottky contacts on n-4 H -silicon carbide

Gora, V.E.; Chawanda, Albert; Nyamhere, Cloud; Auret, F.D.; Mazunga, Felix; Jaure, T.; Chibaya, Blessing; Omotoso, Ezekiel; Danga, Helga T.; Tunhuma, Shandirai Malven

doi:10.1016/j.physb.2017.08.024

Cited by 29 publications

(13 citation statements)

References 34 publications

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“…The ideality factor value (n) is greater than 1 when there is the presence of interface layer or surface conditions, the effect of series resistance, the height of the barrier caused by interface defects and manufacturing defects. The larger ideality factor might show that current carrying mechanisms is other than thermionic emissions [40].…”

Section: Resultsmentioning

confidence: 99%

Fabrication and Analysis Of 2D/3D Heterojunction Between Continuous Few-layer WS2 Film and Si (100)†

Acar¹,

Mobtakeri²,

Ertuğrul³

et al. 2021

Hittite J. Sci. Eng.

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T he excellent electronic properties of the various two-dimensional (2D) materials have led to new developments for the nanoelectronic devices after discovering of the graphene. Heterostructures created by using 2D and 3D materials are becoming one of the main research area for the nanoelectronic devices in recent years [1]. TMDCs such as WS 2 , MoS 2 , MoSe 2 , and WSe 2 have adjustable bandgaps to be indirect in their bulk form and direct in the monolayer [2]. This feature has potential in various electronic and optical applications for TMDCs [3]. Structurally, WS 2 has a crystal structure consisting of S-W-S sandwich layers and the atoms in the layers are packaged hexagonally [4]. These layers are held together by the weak van der Waals (vdW) forces so WS 2 can easily be converted into a single layer form [5]. Because of these significant features, WS 2 has become a good candidate for the new generation micro and nanoelectronics [6]. Unlike the graphene, the WS 2 has a direct band gap semiconductor with a gap of 2.1 eV in single layer form while as the material passes into a bulk form, the gap is direct in the size of 1.3 eV [7]. The presence of this bandgap made it possible to produce WS 2 transistors with a 10 8 on/off ratio and high sensitivity photo detectors [8].

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Section: Resultsmentioning

confidence: 99%

Fabrication and Analysis Of 2D/3D Heterojunction Between Continuous Few-layer WS2 Film and Si (100)†

Acar¹,

Mobtakeri²,

Ertuğrul³

et al. 2021

Hittite J. Sci. Eng.

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“…Annealing at 700 C led to the emergence of two additional W phases (1 0 2) and (2 2 0) at positions 73. 2 and 87. 4 .…”

Section: X-ray Diffractionmentioning

confidence: 99%

“…1 This has been attributed to the exceptional chemical, mechanical, and physical properties of the metal and the superior semiconductor and physical properties of SiC. In a comparative study of metal contacts on 4H-SiC, Gora et al 2 concluded that the W and 4H-SiC couple would be the most suitable for fabrication of devices that can operate at high temperatures. 4H-SiC has a bandgap of approximately 3.3 eV at room temperature, and tungsten has the highest melting point of all elemental metals.…”

Section: Introductionmentioning

confidence: 99%

“…8,9 Several authors have reported on the metallurgical, electrical characteristics, structural composition, and interface properties of tungsten contacts on silicon carbide. 2,[10][11][12][13][14][15][16] Using different techniques, it has been proven that interfacial reactions between tungsten and silicon carbide result in the formation of different phases of tungsten carbides and tungsten silicides at particular temperatures depending on the inertness of the environment. Rogowski and Kubaik 10 showed that one of the products, i.e., WC, migrated and reached the 4H-SiC substrate at elevated temperatures.…”

Section: Introductionmentioning

confidence: 99%

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Defects induced by solid state reactions at the tungsten-silicon carbide interface

Tunhuma

Diale

Legodi

et al. 2018

Journal of Applied Physics

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Defects introduced by the solid state reactions between tungsten and silicon carbide have been studied using deep level transient spectroscopy (DLTS) and Laplace DLTS. W/4H-SiC Schottky barrier diodes were isochronally annealed in the 100–1100 °C temperature range. Phase composition transitions and the associated evolution in the surface morphology were investigated using x-ray diffraction (XRD) and scanning electron microscopy (SEM). After annealing at 1100 °C, the E0.08, E0.15, E0.23, E0.34, E0.35, E0.61, E0.67, and E0.82 defects were observed. Our study reveals that products of thermal reactions at the interface between tungsten and n-4H-SiC may migrate into the semiconductor, resulting in electrically active defect states in the bandgap.

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“…10 It has also been demonstrated that Pd, Au, Ag, Tb, Mn, Al, Ni, and Mg can be used as Schottky contacts to SiC at room temperature. 11,12 Apart from elemental metals, compounds such as TaSi 2 and TiN also show ohmic behavior as contacts to SiC. 10 Another concept that has been exploited is the use of multi-layer metal contacts such as W/Ti/Ni, W/Pt/ Al, W/AuW/W/Al, and Ti/Al, and eutectic compounds like Al-Si and Al-Ti.…”

Section: Introductionmentioning

confidence: 99%

Characteristics of 21H-SiC Thin Film-Based Schottky Barrier Diodes Using TiN Contacts

Akshara

Rajaram

Krishna

2021

Journal of Elec Materi

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The fabrication of Schottky barrier diodes based on thin films of 21H polytype of SiC is reported. The films were deposited using a single composite target of Si and graphite by magnetron sputtering. The formation of the 21H polytype of SiC was confirmed by x-ray diffraction. The devices were fabricated on single-crystal Si substrates, and electrical properties with TiN and Au/TiN as top lateral contacts were investigated. The rectifying nature, temperature (in the range 300-423 K), and top electrode work function dependence of Schottky parameters were investigated. The room-temperature turn-on voltages for the TiN and Au/TiN top contacts were 8.9 V and 12.8 V, respectively. The ideality factor decreased while the barrier height increased with an increase in temperature. The barrier height for different temperatures was in the range of 1.16-0.82 eV and 0.9-0.77 eV for TiN and Au/TiN interfaces with SiC, respectively. The presence of TiC x N y on the surface of the TiN-SiC-Si-Au device at high temperatures observed using Raman spectroscopy revealed the inhomogeneity due to variation in local interfacial structure. It was demonstrated that the 21H-SiC-based thin film Schottky barrier diodes are a promising alternative for many applications.

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Comparison of nickel, cobalt, palladium, and tungsten Schottky contacts on n-4 H -silicon carbide

Cited by 29 publications

References 34 publications

Fabrication and Analysis Of 2D/3D Heterojunction Between Continuous Few-layer WS2 Film and Si (100)†

Fabrication and Analysis Of 2D/3D Heterojunction Between Continuous Few-layer WS2 Film and Si (100)†

Defects induced by solid state reactions at the tungsten-silicon carbide interface

Characteristics of 21H-SiC Thin Film-Based Schottky Barrier Diodes Using TiN Contacts

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