Defects induced by solid state reactions at the tungsten-silicon carbide interface

Tunhuma, Shandirai Malven; Diale, M.; Legodi, M.J.; Nel, Jackie M.; Thabete, T. T.; Auret, F.D.

doi:10.1063/1.5011242

Cited by 11 publications

(3 citation statements)

References 37 publications

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“…DLTS measures the capacitance of a reverse biased p-n junction, Schottky barrier diode or MOS device due to the emission of carriers by defects in the depletion region. DLTS is one of the most sensitive techniques, as it has the ability to detecting defects at such low concentrations and measures their electronic properties [85,87].…”

Section: Deep-level Transient Spectroscopy (Dlts)mentioning

confidence: 99%

The effect of alpha particle irradiation on electrical properties and defects of ZnO thin films prepared by sol-gel spin coating

Ahmed

Taghizadeh

Auret

et al. 2019

Materials Science in Semiconductor Processing

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Section: Deep-level Transient Spectroscopy (Dlts)mentioning

confidence: 99%

The effect of alpha particle irradiation on electrical properties and defects of ZnO thin films prepared by sol-gel spin coating

Ahmed

Taghizadeh

Auret

et al. 2019

Materials Science in Semiconductor Processing

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“…Several techniques have been used to produce WC layers, such as magnetron sputtering [55], mixing W and C plasma streams [56] or evaporation [57]. Indeed, the difficulty to obtain pure carbide films relies on the high affinity of WC for oxygen, which can often be revealed inside the deposited WC films [37,58,59]. Instead, the oxygen edge could not be detected in the EELS spectra collected in the WC layer annealed at 800 • C. A possible explanation can be found in the diffusion of the oxygen toward the surface and AlGaN interfaces during the annealing treatment at a very high temperature (800 • C).…”

Section: Resultsmentioning

confidence: 99%

Thermal annealing effect on electrical and structural properties of Tungsten Carbide Schottky contacts on AlGaN/GaN heterostructures

Greco

Franco

Bongiorno

et al. 2020

Semicond. Sci. Technol.

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Tungsten carbide (WC) contacts have been investigated as a novel gold-free Schottky metallization for AlGaN/GaN heterostructures. The evolution of the electrical and structural/compositional properties of the WC/AlGaN contact has been monitored as a function of the annealing temperature in the range from 400 to 800°C. The Schottky barrier height (ΦB) at WC/AlGaN interface, extracted from the forward current-voltage characteristics of the diode, decreased from ∼0.8 eV in the asdeposited and 400°C annealed sample, to 0.56 eV after annealing at 800 °C. This large reduction of ΦB was accompanied by a corresponding increase of the reverse bias leakage current. Transmission electron microscopy coupled to electron energy loss spectroscopy analyses revealed the presence of oxygen (O) uniformly distributed in the WC layer, both in the as-deposited and 400°C annealed sample. Conversely, oxygen accumulation in a 2-3 nm thin W-O-C layer at the interface with AlGaN was observed after the annealing at 800 °C, as well as the formation of W2C grains within the film (confirmed by X-ray diffraction analyses). The formation of this interfacial W-O-C layer is plausibly the main origin of the decreased ΦB and the increased leakage current in the 800°C annealed Schottky diode, whereas the decreased O content inside the WC film can explain the reduced resistivity of the metal layer. The results provide an assessment of the processing conditions for the application of WC as Schottky contact for AlGaN/GaN heterostructures.

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“…Numerous PFC concept studies are currently underway due to the good compatibility between W-SiC (in terms of thermal expansion, bonding technology and operating temperature window) [ 86 , 87 ]. The development of technology to join SiC/SiC with itself or with other materials is essential for their integration into various nuclear applications.…”

Section: Structural Materialsmentioning

confidence: 99%

Materials to Be Used in Future Magnetic Confinement Fusion Reactors: A Review

Alba¹,

Rodríguez²,

Cerdeira³

2022

Materials

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This paper presents the roadmap of the main materials to be used for ITER and DEMO class reactors as well as an overview of the most relevant innovations that have been made in recent years. The main idea in the EUROfusion development program for the FW (first wall) is the use of low-activation materials. Thus far, several candidates have been proposed: RAFM and ODS steels, SiC/SiC ceramic composites and vanadium alloys. In turn, the most relevant diagnostic systems and PFMs (plasma-facing materials) will be described, all accompanied by the corresponding justification for the selection of the materials as well as their main characteristics. Finally, an outlook will be provided on future material development activities to be carried out during the next phase of the conceptual design for DEMO, which is highly dependent on the success of the IFMIF-DONES facility, whose design, operation and objectives are also described in this paper.

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Defects induced by solid state reactions at the tungsten-silicon carbide interface

Cited by 11 publications

References 37 publications

The effect of alpha particle irradiation on electrical properties and defects of ZnO thin films prepared by sol-gel spin coating

The effect of alpha particle irradiation on electrical properties and defects of ZnO thin films prepared by sol-gel spin coating

Thermal annealing effect on electrical and structural properties of Tungsten Carbide Schottky contacts on AlGaN/GaN heterostructures

Materials to Be Used in Future Magnetic Confinement Fusion Reactors: A Review

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