Comparison of Pb(Zr, Ti)O3 capacitors sandwiched with conductive La0.5Sr0.5CoO3 and non-conductive Bi3.25La0.75Ti3O12 layers

Liu, B.T.; Zhang, X.; Zhang, W.T.; Yan, Zheng; Cheng, Chun-Sheng; Li, F.; Li, Lei; Zhao, Qian

doi:10.1016/j.matlet.2006.10.071

Cited by 8 publications

(3 citation statements)

References 14 publications

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“…This means that a large polarization of the BLT/PZT capacitor is only achieved when the BLT layer is thin enough. 22) Simultaneously, the C-V characteristics of these samples were also investigated and are shown in Fig. 4.…”

Section: Resultsmentioning

confidence: 99%

Electric Properties and Interface Charge Trap Density of Ferroelectric Gate Thin Film Transistor Using (Bi,La)₄Ti₃O₁₂/Pb(Zr,Ti)O₃ Stacked Gate Insulator

Thanh

Trinh

Miyasako

et al. 2012

Jpn. J. Appl. Phys.

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We successfully fabricated ferroelectric gate thin film transistors (FGTs) using solution-processed (Bi,La) 4 Ti 3 O 12 (BLT)/Pb(Zr,Ti)O 3 (PZT) stacked films and an indium-tin oxide (ITO) film as ferroelectric gate insulators and an oxide channel, respectively. The typical n-type channel transistors were obtained with the counterclockwise hysteresis loop due to the ferroelectric property of the BLT/PZT stacked gate insulators. These FGTs exhibited good device performance characteristics, such as a high ON/OFF ratio of 10 6 , a large memory window of 1.7-3.1 V, and a large ON current of 0.5-2.5 mA. In order to investigate interface charge trapping for these devices, we applied the conductance method to MFS capacitors, i.e., Pt/ITO/BLT/PZT/Pt capacitors. As a result, the interface charge trap density (D it ) between the ITO and BLT/PZT stacked films was estimated to be in the range of 10 À11 -10 À12 eV À1 cm À2 . The small D it value suggested that good interfaces were achieved.

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Section: Resultsmentioning

confidence: 99%

Electric Properties and Interface Charge Trap Density of Ferroelectric Gate Thin Film Transistor Using (Bi,La)₄Ti₃O₁₂/Pb(Zr,Ti)O₃ Stacked Gate Insulator

Thanh

Trinh

Miyasako

et al. 2012

Jpn. J. Appl. Phys.

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“…6) Recently, non-noble conductive oxide materials such as LaNiO 3 (LNO), Al-doped ZnO, (La,Sr)CoO 3 , and Sn-doped In 2 O 3 (ITO) have been used instead of Pt as an electrode material. [7][8][9][10][11] Integration with the conductive oxide layers could potentially yield ferroelectric-semiconductor memory component with better properties than those that utilize the conventionally used Pt electrodes. 10) It is also believed that the oxygen vacancies in the ferroelectric films can easily exchange with the oxygen in the oxide electrodes.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and electrical properties of a (Pb,La)(Zr,Ti)O₃capacitor with pulsed laser deposited Sn-doped In₂O₃bottom electrode on Al₂O₃(0001)

Takada

Tamano

Okamoto

et al. 2017

Jpn. J. Appl. Phys.

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A Sn-doped In2O3 (ITO) electrode was deposited on Al2O3(0001) using pulsed laser deposition at different oxygen pressures to create the bottom electrode of a (Pb,La)(Zr,Ti)O3 (PLZT) capacitor. The crystallographic orientation of the ITO films was controlled via the oxygen pressure. At 600 °C the (111) peak became dominant when the O2 pressure was increased, and when the pressure reached 2.0 Pa the ITO films became preferentially (111) oriented. The remnant polarization was 58.8–90.7 and 46.0–47.5 µC/cm2 for the Pt/PLZT/ITO and ITO/PLZT/ITO capacitors, respectively; the ferroelectric properties of these capacitors were also determined.

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“…In this particular study, lead zirconate titanate (PZT) mixed homogenous multicomponent binder is used as powder-polymer composite for CIM of microarray. PZT microarrays have been previously established with numerous applications such as nonvolatile memory devices because for their commendable ferroelectric properties; and as sensors in actuators in microelectromechanical systems (MEMS) due to its piezoelectric properties [8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Material properties design using simulations and experiments for powder injection molding of lead zirconate titanate (PZT).

Bandiwadekar¹

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I would also like to thank my mentor Dr. Sundar Atre, for identifying my talent and capabilities in research and making me part of his guild, Materials Innovation Guild. As an expert himself in the field of my research, he offered me several opportunities to interact with the industry and making me part of various training programs. He always pushed me to present my research in front of an audience, be it in front of my lab mates, industry people or at a conference. His constructive critisim on my research interpretations has always lead me to work smarter and present my ideas better. My research lab, Materials Innovation Guild, is nothing less than a corporate research centre. Each individual has her/his own expertise which makes the research group more versatile and innovative. I would like to thank my collegues, especially Harish Irrinki, Subrata Debnath, Nirupama Warrier and Paramjoth Singh to name a few, who have always been kind, helpful and supportive throughout the research. I would also like to thank our v collaborators from Pohang University of Science and Technology, South Korea for their support and guidance. Researchers are sometimes told, "Get a life!", and I have one, thanks to my friends Juili, Muddasir, Sonali and many more from my circle of friends for their goodwill, support and guidance through numerous tough decisions. With ambitions soaring high, I relied on them to strike a balance between work and leisure. Last but not the least, I would like to thank my parents, Pramod A. Bandiwadekar and Pradnya P. Bandiwadekar, firstly, for bringing me into this world and instilling courage and confidence in me and secondly, for supporting my endeavors and trusting my steps towards a fulfilling career.

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Comparison of Pb(Zr, Ti)O3 capacitors sandwiched with conductive La0.5Sr0.5CoO3 and non-conductive Bi3.25La0.75Ti3O12 layers

Cited by 8 publications

References 14 publications

Electric Properties and Interface Charge Trap Density of Ferroelectric Gate Thin Film Transistor Using (Bi,La)₄Ti₃O₁₂/Pb(Zr,Ti)O₃ Stacked Gate Insulator

Electric Properties and Interface Charge Trap Density of Ferroelectric Gate Thin Film Transistor Using (Bi,La)₄Ti₃O₁₂/Pb(Zr,Ti)O₃ Stacked Gate Insulator

Fabrication and electrical properties of a (Pb,La)(Zr,Ti)O₃capacitor with pulsed laser deposited Sn-doped In₂O₃bottom electrode on Al₂O₃(0001)

Material properties design using simulations and experiments for powder injection molding of lead zirconate titanate (PZT).

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Comparison of Pb(Zr, Ti)O3 capacitors sandwiched with conductive La0.5Sr0.5CoO3 and non-conductive Bi3.25La0.75Ti3O12 layers

Cited by 8 publications

References 14 publications

Electric Properties and Interface Charge Trap Density of Ferroelectric Gate Thin Film Transistor Using (Bi,La)4Ti3O12/Pb(Zr,Ti)O3 Stacked Gate Insulator

Electric Properties and Interface Charge Trap Density of Ferroelectric Gate Thin Film Transistor Using (Bi,La)4Ti3O12/Pb(Zr,Ti)O3 Stacked Gate Insulator

Fabrication and electrical properties of a (Pb,La)(Zr,Ti)O3capacitor with pulsed laser deposited Sn-doped In2O3bottom electrode on Al2O3(0001)

Material properties design using simulations and experiments for powder injection molding of lead zirconate titanate (PZT).

Contact Info

Product

Resources

About

Electric Properties and Interface Charge Trap Density of Ferroelectric Gate Thin Film Transistor Using (Bi,La)₄Ti₃O₁₂/Pb(Zr,Ti)O₃ Stacked Gate Insulator

Electric Properties and Interface Charge Trap Density of Ferroelectric Gate Thin Film Transistor Using (Bi,La)₄Ti₃O₁₂/Pb(Zr,Ti)O₃ Stacked Gate Insulator

Fabrication and electrical properties of a (Pb,La)(Zr,Ti)O₃capacitor with pulsed laser deposited Sn-doped In₂O₃bottom electrode on Al₂O₃(0001)