Comparison of photon recycling effect in GaAs and GaN structures

Udal, Andres; Velmre, Enn

doi:10.3176/eng.2004.3.02

Proceedings of the Estonian Academy of Sciences. Engineering

2004

DOI: 10.3176/eng.2004.3.02

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Comparison of photon recycling effect in GaAs and GaN structures

Andres Udal¹,

Enn Velmre²

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Cited by 2 publications

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Vertical GaN bipolar devices: Gaining competitive advantage from photon recycling

Mochizuki

2016

Physica Status Solidi (a)

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It is shown that peripheral current Ip flows in non‐self‐aligned mesa‐type p–n diodes but that Ip flowing in GaN diodes cannot be explained by elongated minority‐carrier lifetime associated with intrinsic photon recycling (IPR), i.e., reabsorption of radiative recombination. Accordingly, possible increase in the ratio of deep Mg acceptors (energy level: EA) due to extrinsic photon recycling (EPR) is proposed, and the effect of EPR is expressed as an effective EA. Due to the limit on the power dissipation of a semiconductor package, EPR works effectively in the case of zero‐offset bipolar‐junction transistors, whose base doping level is limited in terms of emitter‐injection efficiency. Measured and simulated forward‐current–voltage characteristics of non‐self‐aligned mesa‐type GaN p–n diodes.

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Vertical GaN bipolar devices: Gaining competitive advantage from photon recycling

Mochizuki

2016

Physica Status Solidi (a)

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Influence of Surface Recombination on Forward Current–Voltage Characteristics of Mesa GaN $\hbox{p}^{+}\hbox{n}$ Diodes Formed on GaN Free-Standing Substrates

Mochizuki

Nomoto

Hatakeyama

et al. 2012

IEEE Trans. Electron Devices

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Comparison of photon recycling effect in GaAs and GaN structures

Cited by 2 publications

References 21 publications

Vertical GaN bipolar devices: Gaining competitive advantage from photon recycling

Vertical GaN bipolar devices: Gaining competitive advantage from photon recycling

Influence of Surface Recombination on Forward Current–Voltage Characteristics of Mesa GaN $\hbox{p}^{+}\hbox{n}$ Diodes Formed on GaN Free-Standing Substrates

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