Comparison of Single Event Transients Generated at Four Pulsed-Laser Test Facilities-NRL, IMS, EADS, JPL

Büchner, S.; Roche, N.; Warner, Jeffrey H.; McMorrow, D.; Miller, F.; Morand, S.; Pouget, Vincent; Larue, Camille; Ferlet-Cavrois, V.; Mamouni, F. El; Kettunen, H.; Adell, P.C.; Allen, Gregory R.; Aveline, David C.

doi:10.1109/tns.2012.2201956

Cited by 44 publications

(8 citation statements)

References 10 publications

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“…The tests involved measuring SET amplitude and collected charge as a function of applied bias, laser pulse energy and focused spot size. Moreover, a comparison of the SETs obtained from heavy ions with those from pulsed laser light at NRL and EADS showed very similar results with Ar ions with LET 10 MeV·cm 2 /mg [5].…”

Section: Introductionmentioning

confidence: 64%

“…We use the same photodiode than in [5] as a test vehicle, a Centronic OSD15-5T having dimensions of 3.8 mm 3.8 mm and optical sensitivity peaked at 800 nm. The laser pulses were directed at the front surface of the photodiode to produce SETs under a variety of conditions.…”

Section: A Test Vehiclementioning

confidence: 99%

“…In [5] an attempt has been made to compare SEEs obtained from different laser test facilities using a simple large-area photodiode as a test vehicle. SETs were generated in identical photodiodes at four pulsed laser facilities: EADS in Paris [6], IMS in Bordeaux [7], JPL in Pasadena CA [8] and NRL [9] in Washington DC.…”

Section: Introductionmentioning

confidence: 99%

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Single event transients generation in silicon devices with pulsed laser

Paul

Bandi

Segura

et al. 2015

2015 10th Spanish Conference on Electron Devices (CDE)

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We perform a comparative study of the characteristics and capabilities of a pulsed laser system that emulates single event injection available at the UIB with respect to similar pulsed laser test facilities in Europe (EADS, IMS) and the United States (JPL, NRL). A series of experimental measurements were taken on a silicon photodiode (Centronic OSD15-5T) used in a previous comparative study conducted by the mentioned centers.

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Section: Introductionmentioning

confidence: 64%

Section: A Test Vehiclementioning

confidence: 99%

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Single event transients generation in silicon devices with pulsed laser

Paul

Bandi

Segura

et al. 2015

2015 10th Spanish Conference on Electron Devices (CDE)

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“…The wavelength of the pulsed laser microbeam and the size of the focused spot are considered to be the two main factors, [13] and pulsed lasers with wavelengths of 1064 nm and 532 nm were selected. Firstly, the interdigital region of the device was scanned by a pulsed laser to determine the more sensitive region.…”

Section: Setting Of Experimental Conditionsmentioning

confidence: 99%

Sensitivity study of the SiGe heterojunction bipolar transistor single event effect based on pulsed laser and technology computer-aided design simulation

et al. 2023

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In this work, the single event effect of the Silicon-germanium heterojunction bipolar transistor (SiGe HBT) was thoroughly investigated. By considering the worst bias condition, the sensitive area of the proposed device was scanned with a pulsed laser. With the variation of the collector bias and pulsed laser incident energy, the single event transient of the SiGe HBT was studied. Moreover, the single event transient produced by the laser irradiation at 532 nm wavelength was more pronounced than that of the 1064 nm wavelength. Finally, the impact of the equivalent linear energy transfer (LET) of the 1064 nm pulsed laser on the single transient event was qualitatively examined by performing technology computer-aided design (TCAD) simulations, whereas a good consistency between the experimental data and the simulated outcomes was attained.

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“…The irradiation caused increases in interface state densities, as well as input, output and reverse transfer capacitances with increasing accumulated doses. [239][240][241][242][243][244][245] Displacement damage effects 24,72,99 on forward bias I-V of SiC commercial 4H-SiC Schottky diodes exposed to 203 MeV protons revealed that the diodes showed excellent resistance to radiation damage at fluences up to 2.5 × 10 14 p cm −2 . There were only minor changes in the reverse bias I-Vs with the reverse leakage decreasing with increasing irradiation fluence, while in forward bias, the sheet resistance R S increased as fluence increases.…”

Section: Total Dose and Single Event Upsetmentioning

confidence: 99%

Review—Radiation Damage in Wide and Ultra-Wide Bandgap Semiconductors

Pearton

Aitkaliyeva

Xian

et al. 2021

ECS J. Solid State Sci. Technol.

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The wide bandgap semiconductors SiC and GaN are already commercialized as power devices that are used in the automotive, wireless, and industrial power markets, but their adoption into space and avionic applications is hindered by their susceptibility to permanent degradation and catastrophic failure from heavy-ion exposure. Efforts to space-qualify these wide bandgap power devices have revealed that they are susceptible to damage from the high-energy, heavy-ion space radiation environment (galactic cosmic rays) that cannot be shielded. In space-simulated conditions, GaN and SiC transistors have shown failure susceptibility at ∼50% of their nominal rated voltage. Similarly, SiC transistors are susceptible to radiation damage-induced degradation or failure under heavy-ion single-event effects testing conditions, reducing their utility in the space galactic cosmic ray environment. In SiC-based Schottky diodes, catastrophic single-event burnout (SEB) and other single-event effects (SEE) have been observed at ∼40% of the rated operating voltage, as well as an unacceptable degradation in leakage current at ∼20% of the rated operating voltage. The ultra-wide bandgap semiconductors Ga2O3, diamond and BN are also being explored for their higher power and higher operating temperature capabilities in power electronics and for solar-blind UV detectors. Ga2O3 appears to be more resistant to displacement damage than GaN and SiC, as expected from a consideration of their average bond strengths. Diamond, a highly radiation-resistant material, is considered a nearly ideal material for radiation detection, particularly in high-energy physics applications. The response of diamond to radiation exposure depends strongly on the nature of the growth (natural vs chemical vapor deposition), but overall, diamond is radiation hard up to several MGy of photons and electrons, up to 1015 (neutrons and high energetic protons) cm−2 and >1015 pions cm−2. BN is also radiation-hard to high proton and neutron doses, but h-BN undergoes a transition from sp2 to sp3 hybridization as a consequence of the neutron induced damage with formation of c-BN. Much more basic research is needed on the response of both the wide and ultra-wide bandgap semiconductors to radiation, especially single event effects.

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Comparison of Single Event Transients Generated at Four Pulsed-Laser Test Facilities-NRL, IMS, EADS, JPL

Cited by 44 publications

References 10 publications

Single event transients generation in silicon devices with pulsed laser

Single event transients generation in silicon devices with pulsed laser

Sensitivity study of the SiGe heterojunction bipolar transistor single event effect based on pulsed laser and technology computer-aided design simulation

Review—Radiation Damage in Wide and Ultra-Wide Bandgap Semiconductors

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