Comparison of static, switching and thermal behavior between a 1500 V silicon and silicon carbide bipolar diodes

Nallet, F.; Planson, Dominique; Isoird, Karine; Locatelli, Marie-Laure; Chante, Jean-Pierre

doi:10.1109/smicnd.1999.810461

Cited by 4 publications

(4 citation statements)

References 12 publications

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“…:15, ¼ 0:05, and ¼ 0:6 while those used for holes are min ¼ 16 cm 2 V À1 s À1 , max ¼ 140 cm 2 V À1 s À1 , N ref ¼ 1:7 Â 10 19 cm À3 , ¼ À1:6, ¼ À2:14, ¼ 0:17, and ¼ 0:34. At high fields, drift velocity saturates owing to the increase in optical phonon scattering and reaches saturation velocity, which is described by 9) ðEÞ…”

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confidence: 99%

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Electrical and Optical Modeling of 4H-SiC Avalanche Photodiodes

Cha¹,

Sandvik

2008

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Optimal physical models and material parameters for 4H-SiC avalanche photodiodes (APDs) were studied using a two-dimensional device simulation tool. In the models, we took account of temperature-dependent impact ionization and absorption coefficient as a function of wavelength. The absorption coefficient spectra derived in this work exhibited a rapid increase below ∼300 nm, which can be qualitatively incorporated into indirect and direct band transition models. The simulated characteristics were in good agreement with the measured characteristics.

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confidence: 99%

“…The energy spacings E id ðN; TÞ and E d ðN; TÞ in eqs. ( 5) and ( 6) are given by 9,14) E id,d ðN; TÞ ¼ E id,d ðNÞ À 3:3 Â 10 À4 Á ðT À 300Þ ð7aÞ…”

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Electrical and Optical Modeling of 4H-SiC Avalanche Photodiodes

Cha¹,

Sandvik

2008

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“…Due to an indirecttransition material, for lower absorption coefficients, we calculate the values as a function of doping, temperature and incident photon energy with the Matlab package. The numerical formula is expressed by [23] 2 2…”

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confidence: 99%

Analysis of temperature-dependent characteristics of a 4H-SiC metal-semiconductor-metal ultraviolet photodetector

et al. 2012

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We investigate the temperature dependence of current-voltage and spectral response characteristics of a 4H-SiC metal-semiconductor-metal (MSM) ultraviolet photodetector in the temperature range from room temperature to 800 K with two-dimensional (2D) numerical simulator ISE-DESSIS. It is found that the dark current and photocurrent increase with the increasing temperature. For the range of 500-800 K, the dark current increases by nearly a factor 3.5 every 150 K larger than that of photocurrent, leading to a negative effect on photodetector current ratio (PDCR). Nevertheless, the PDCR is still greater than 200 even at 800 K, which exhibits the excellent thermal stability. In addition, the responsivity has an unsymmetrical trend. As temperature rises, it is clear that a remarkable red-shift of 12 nm occurs and overall responsivity is enhanced for longer wavelength. While the short-wavelength response remains relatively independent of temperature. The mechanism of indirect and direct band absorption transition is responsible for temperature-dependent spectrum distribution. These findings provide a significant insight on the design of the MSM detector operated at elevated temperature. silicon carbide, ultraviolet photodetector, temperature dependence Citation:Chen B, Yang Y T, Xie X R, et al. Analysis of temperature-dependent characteristics of a 4H-SiC metal-semiconductor-metal ultraviolet photodetector. Chin Sci Bull, 2012Bull, , 57: 44274433, doi: 10.1007 In despite of having an indirect bandgap, silicon carbide (SiC) has emerged as an appropriate material for the fabrication of ultraviolet (UV)/visible optoelectronic devices over the last few years due to the available substrates [1], the lower defect density and a more mature process technology [2]. Typically, 4H-SiC based UV photodetectors achieve photosensitivity spectrum of 220-380 nm and peak responsivity at around 290 nm. Photodetectors based on Schottky contacts have an enhanced sensitivity to shorter wavelength radiation as well as a reduced response time as no minority carriers are involved [3]. Especially, the metalsemiconductor-metal (MSM) photodetectors possess potential merits of large device bandwidth, small intrinsic capacitance, and sub-nanosecond response time. Whilst the planar process of MSM detectors may be accomplished with as little as one photolithography step and allows their monolithic integration with other optical and electronic circuits [4]. Recent achievements include nano-structured MSM photodetector with high peak voltage [5], MSM solar-blind photodetector with fast rise and decay times of 10 ns and 150 ns [6], high responsivity MSM photodetector with 26000 A/W at 8 V bias via a carrier-trapping process [7]. More recently, MSM UV detectors exhibit UV-photo generated current to dark current ratio up to 1.34×10 8 with colloidal nanoparticles [8], realize a photocurrent gain around 40 at 2 V bias using CaF 2 as the insulator [9], and achieve a very low dark current density of 3.84 nA/cm 2 at 5 V bias based on sol-gel-derived TiO 2 f...

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“…Electrothermal simulations have been performed to take into account selfheating during a current surge wave. The parameters of the models used for the simulations [1] are:…”

Section: Introductionmentioning

confidence: 99%

Electrical and electrothermal 2D simulations of a 4H-SiC high voltage current limiting device for serial protection applications

Nallet

Senes

Planson

et al.

12th International Symposium on Power Semiconductor Devices &Amp; ICs. Proceedings (Cat. No.00CH37094)

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Comparison of static, switching and thermal behavior between a 1500 V silicon and silicon carbide bipolar diodes

Cited by 4 publications

References 12 publications

Electrical and Optical Modeling of 4H-SiC Avalanche Photodiodes

Electrical and Optical Modeling of 4H-SiC Avalanche Photodiodes

Analysis of temperature-dependent characteristics of a 4H-SiC metal-semiconductor-metal ultraviolet photodetector

Electrical and electrothermal 2D simulations of a 4H-SiC high voltage current limiting device for serial protection applications

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