scale strategy for high-k/metal-gate UTBB-FDSOI devices modeling with emphasis on back bias impact on mobility. Journal of Computational Electronics, Springer Verlag, 2013, 12, pp.675-684. 10.1007 Multi-scale analysis of the mobility in high-k UTBB-FDSOI Devices and comparison to split-CV measurements. Abstract-A rigorous study of the mobility in high-k metal gate Ultra-Thin Body and Box Fully Depleted SOI (UTBB-FDSOI) devices is done by means of split C-V measurements and advanced simulations. Measurements have been performed for various Interfacial Layer (IL)Equivalent Oxide Thickness (EOT) allowing an investigation of the physical mechanisms responsible for the mobility degradation at high-k/IL interface. The impact of the back bias on transport properties is investigated and mobility enhancement in the forward regime (back gate inversion) is demonstrated. A multi-scale simulation approach is performed and we compared simulated mobility using quantum Non-Equilibrium Green's Functions (NEGF) to semi-classical solvers results using the Kubo Greenwood (KG) approach. We demonstrated good correlations between these solvers comparing phonon and remote Coulomb-limited mobility. However, a clear overestimation of the surface roughnesslimited mobility determined using semi-classical solvers is shown compared to NEGF results. These advanced solvers have been used to reproduce mobility measurements allowing us to calibrate Technology computer aided design (TCAD) mobility models.

TCAD simulations are conducted on a pinned photodiode (PPD), with the aim to reproduce the pinning voltage measurement developed by Tan et al. A thermionic model is proposed and detailed in order to explain the exponential injection occurring at an injection voltage higher than the pinning voltage, and the correct method to extract the transfer gate inversion voltage is given. Then, various non idealities are simulated, such as doping variations or doping layer shifts, the goal being to get a PPD diagnostic tool based on the pinning voltage measurement. Finally, the pinned photodiode is simulated in a real reading mode, and a charge partition mechanism is demonstrated in specific conditions.

This paper aims to review important theoretical and experimental aspects of both electrostatics and channel mobility in High-K Metal Gate UTBB-FDSOI MOSFETs. A simulation chain, including advanced quantum solvers, and semi-empirical Technology Computer Assisted Design (TCAD) tools is presented

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