Comparison of thin films ofYBa2Cu3O7−x deposited by physical (laser ablation) and chemical (OMCVD) methods for device applications

Schieber, M.; Han, S.C.; Ariel, Yaakov; Chokron, S.; Tsach, Tsadok; Maharizi, M.; Deutscher, C.; Racah, D.; Raizman, A.; Rotter, S.

doi:10.1016/0022-0248(91)90709-e

Cited by 20 publications

(6 citation statements)

References 16 publications

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“…Figure 4c shows that the FWHM of Co 3 0 4 (400) reflection of the film as deposited is 0.330. This compares well with FWHM of 0.28' of the (005) reflection of YBa 2 Cu307-5 films grown on SrTiO 3 (001) by MOCVD at 850'C [10]. To examine whether epitaxy is improved by annealing, the Co 3 0 4 films on LaA10 3 and SrTiO 3 were annealed for 60 min at 725°C in flowing oxygen.…”

Section: Resultsmentioning

confidence: 83%

Epitaxial Growth of Co₃O₄ Films by Low Temperature, Low Pressure Chemical Vapor Deposition

et al. 2000

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The growth of strongly oriented or epitaxial thin films of metal oxides generally requires relatively high growth temperatures or infusion of energy to the growth surface through means such as ion bombardment. We have grown high quality epitaxial thin films of Co 3 0 4 on different substrates at a temperature as low as 450'C by low-pressure metal-organic chemical vapor deposition (MOCVD) using cobalt(II) acetylacetonate as the precursor. With oxygen as the reactant gas, polycrystalline Co 3 0 4 films are formed on glass and Si(1 00) in the temperature range 350-550'C. Under similar conditions of growth, highly oriented films of Co 3 0 4 are formed on SrTiO 3 (100) and LaA10 3 (100). The film on LaA10 3 (100) grown at 450'C show a rocking curve FWHM of 1.61', which reduces to 1.32' when it is annealed in oxygen at 725 0 C. The film on SrTiO 3 (100) has a FWHM of 0.330 (as deposited) and 0.29' (after annealing at 725 0 C). The *-scan analysis shows cube-on-cube epitaxy on both these substrates. The quality of epitaxy on SrTiO 3 (100) is comparable to the best of the pervoskite-based oxide thin films grown at significantly higher temperatures.

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Section: Resultsmentioning

confidence: 83%

Epitaxial Growth of Co₃O₄ Films by Low Temperature, Low Pressure Chemical Vapor Deposition

et al. 2000

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“…Unfortunately, this method will result in a significant reduction of the sputtering rate. The second possibility, which has been the most widely used since the discovery of the HTS, is to work in the commonly used gas pressure region (10)(11)(12)(13)(14)(15)(16)(17)(18)(19)(20) and to avoid substrate bombardment by proper choice of the position of the substrates. More strictly speaking, the substrate position is optimum at locations where the ratio of bombardment rate and deposition is minimized.…”

Section: Sputter Deposition Techniquementioning

confidence: 99%

“…5,[11][12][13] And in this case, a simple planar heater with uniform temperature distribution is good enough. But the overheating of the first side during the second side deposition may cause the quality of the film to deteriorate, so simultaneous deposition is preferable in order to maintain side-to-side equality.…”

Section: Introductionmentioning

confidence: 97%

Sputter deposition of large-area double-sided YBCO superconducting films

Xiong

Tao

2011

High-Temperature Superconductors

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“…Moreover, differential thermal dilatation across the substrate-film interface results in the appearance of a tensionrelated misfit leading to the appearance of cracks under thermal cycling. Schieber et al [3] have shown the different lattice constants of substrates and YBCO thin films.…”

Section: Introductionmentioning

confidence: 99%

An investigation of superconducting YBCO thin films grown on different substrates

Demirel¹

2002

Supercond. Sci. Technol.

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In this work, superconducting YBa2Cu3O7 (YBCO) thin films were grown on different substrates under the same conditions and their behaviours were investigated. At a higher substrate temperature, because of the occurrence of a chemical reaction between the substrate and film, the film quality was impaired, especially in case of the Al2O3 (sapphire) substrate. Films were also deposited onto other substrates, SrTiO3, MgO and ZrO2, and the effects of these substrates on the film quality were compared by x-ray diffraction.

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Comparison of thin films ofYBa2Cu3O7−x deposited by physical (laser ablation) and chemical (OMCVD) methods for device applications

Cited by 20 publications

References 16 publications

Epitaxial Growth of Co₃O₄ Films by Low Temperature, Low Pressure Chemical Vapor Deposition

Epitaxial Growth of Co₃O₄ Films by Low Temperature, Low Pressure Chemical Vapor Deposition

Sputter deposition of large-area double-sided YBCO superconducting films

An investigation of superconducting YBCO thin films grown on different substrates

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Comparison of thin films ofYBa2Cu3O7−x deposited by physical (laser ablation) and chemical (OMCVD) methods for device applications

Cited by 20 publications

References 16 publications

Epitaxial Growth of Co3O4 Films by Low Temperature, Low Pressure Chemical Vapor Deposition

Epitaxial Growth of Co3O4 Films by Low Temperature, Low Pressure Chemical Vapor Deposition

Sputter deposition of large-area double-sided YBCO superconducting films

An investigation of superconducting YBCO thin films grown on different substrates

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Epitaxial Growth of Co₃O₄ Films by Low Temperature, Low Pressure Chemical Vapor Deposition

Epitaxial Growth of Co₃O₄ Films by Low Temperature, Low Pressure Chemical Vapor Deposition