Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor

Yang, Mengdi; Aarnink, Antonius A.I.; Kovalgin, Alexeij Y.; Gravesteijn, D.J.; Wolters, R.A.M.; Schmitz, Jurriaan

doi:10.1116/1.4936387

Cited by 16 publications

(28 citation statements)

References 47 publications

(47 reference statements)

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“…The resistivity of thin conducting films can be measured either electrically by using dedicated test structures or optically by SE . For both TiN and W films, the SE models consisting of one Drude term and two Lorentz oscillators were successfully implemented . This choice was made considering the well‐established SE model for conducting TiN .…”

Section: The Power Of In Situ Spectroscopic Ellipsometrymentioning

confidence: 99%

“…The films were deposited on top of 100 nm silicon dioxide (SiO 2 ) thermally grown on p‐type Si (100) wafers. Due to the slow nucleation of tungsten on SiO 2 , a W seed layer of an average thickness of ≈2–5 nm was in situ preformed on SiO 2 ; the details can be found elsewhere . Prior to deposition, the wafers were cleaned in fuming (99%) and boiling (69%) HNO 3 to remove organic and metallic contaminations.…”

Section: Hwald Of Tungsten Filmsmentioning

confidence: 99%

“…In our deposition system, we have been able to selectively grow both phases of W by HWALD, depending on the actual reactor design and deposition conditions. In our earlier work, we were able to grow β‐phase W films with a resistivity of about 100 µΩ cm in a cold‐wall HWALD reactor . Factors leading to the preferential formation of one of the phases over the other have been investigated further .…”

Section: Hwald Of Tungsten Filmsmentioning

confidence: 99%

“…This alternative‐to‐plasma and technically easier approach employs a filament that is heated up to a temperature in the range 1300–2000 °C to dissociate precursor molecules, for example, hydrogen or ammonia. Recently, this method has been successfully utilized for ALD of metals such as tungsten (W), nickel (Ni), and cobalt (Co) …”

Section: Introductionmentioning

confidence: 99%

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Hot‐Wire Assisted ALD: A Study Powered by In Situ Spectroscopic Ellipsometry

Kovalgin

Yang

Banerjee

et al. 2017

Adv Materials Inter

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Hot‐wire assisted atomic layer deposition (HWALD) is a novel energy‐enhancement technique. HWALD enables formation of reactive species (radicals) at low substrate temperatures, without the generation of energetic ions and UV photons as by plasma. This approach employs a hot wire (tungsten filament) that is heated up to a temperature in the range of 1300–2000 °C to dissociate precursor molecules. HWALD has the potential to overcome certain limitations of plasma‐assisted processes. This work investigates the ability of a heated tungsten filament to catalytically crack molecular hydrogen or ammonia into atomic hydrogen and nitrogen‐containing radicals. The generation of these radicals and their successful delivery to the wafer (substrate) surface are experimentally confirmed by dedicated tellurium‐etching and silicon‐nitridation experiments. It further reports on deposition of low‐resistivity oxygen‐free tungsten films by using HWALD, as well as on the effect of hot‐wire‐generated nitrogen radicals and atomic hydrogen in deposition of aluminum nitride and boron nitride films. In parallel, this work provides important illustrative examples of using in situ real‐time monitoring of deposition and etching processes, together with extracting a variety of film properties, by spectroscopic ellipsometry technique.

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Section: The Power Of In Situ Spectroscopic Ellipsometrymentioning

confidence: 99%

Section: Hwald Of Tungsten Filmsmentioning

confidence: 99%

Section: Hwald Of Tungsten Filmsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Hot‐Wire Assisted ALD: A Study Powered by In Situ Spectroscopic Ellipsometry

Kovalgin

Yang

Banerjee

et al. 2017

Adv Materials Inter

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“…A hot-wire takes the role of the plasma as the radical source. HWALD has been successfully applied to deposit either αor β-phase crystalline W, depending on the conditions [15][16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

Conduction and Electric Field Effect in Ultra-Thin Tungsten Films

Zouw¹,

Aarnink²,

Schmitz³

et al. 2020

IEEE Trans. Semicond. Manufact.

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Ultra-thin tungsten films were prepared using hotwire assisted atomic layer deposition. The film thickness ranged from 2.5 to 10 nm, as determined by spectroscopic ellipsometry and verified by scanning electron microscopy. The films were implemented in conventional Van der Pauw and circular transmission line method (CTLM) test structures, to explore the effect of film thickness on the sheet and contact resistance, temperature coefficient of resistance (TCR), and external electric field applied. All films exhibited linear current-voltage characteristics. The sheet resistance was shown to considerably vary across the wafer, due to the film thickness non-uniformity. The TCR values changed from positive to negative with decreasing the film thickness. A field-induced modulation of the sheet resistance up to ∼4.6·10 −4 V −1 was obtained for a 2.5 nm thick film, larger than that generally observed for metals.

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Thin‐Film Formation Techniques

Ruzybayev

Ceylan

Rumaiz

et al. 2020

Kirk-Othmer Encyclopedia of Chemical Technology

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Thin films are commonly utilized in industries such as electronics, packaging, decoration, and protection. The two primary techniques for thin‐film deposition include physical vapor deposition (PVD) and chemical vapor deposition (CVD). The selection and application of a particular technique depends on the desired properties of thin films. For example, for electronic applications where via filling is a requirement, preference is for the CVD process where gaseous precursor finds its way to all spaces, forming a uniform thin film on the whole topography. PVD techniques have limitation that the substrate surface has to be in the line of sight of the incoming flux. Contoured surfaces require special source and substrate manipulation for conformal coatings. Likewise, where large flat surface area coverage is needed, like thin films on decorative window glass, a simpler process such as PVD, both as evaporation and sputtering, is preferred over CVD. This article describes PVD and CVD techniques and their multiple variants. PVD processes, evaporation, sputtering, and pulsed laser deposition (PLD) with their variants, ion plating and high‐power impulse magnetron sputtering (HIPIMS), form the first part of the article, whereas the second part contains descriptions of CVD processes, including metalorganic chemical vapor deposition (MOCVD) and plasma‐assisted (or enhanced) chemical vapor deposition (PACVD). Notably absent in this article are molecular beam epitaxy (MBE), a PVD process and atomic layer epitaxy (ALE), a CVD process. These are very controlled deposition processes and require sophisticated control hardware. It is this sophistication that requires MBE and ALD to be dealt separately and, therefore, not included in this article.

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Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor

Cited by 16 publications

References 47 publications

Hot‐Wire Assisted ALD: A Study Powered by In Situ Spectroscopic Ellipsometry

Hot‐Wire Assisted ALD: A Study Powered by In Situ Spectroscopic Ellipsometry

Conduction and Electric Field Effect in Ultra-Thin Tungsten Films

Thin‐Film Formation Techniques

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