In this work, we applied conventional Van der Pauw and circular transmission line method (CTLM) test structures to determine the sheet and contact resistance of ultra-thin (1-10 nm) tungsten films grown by Hot Wire assisted Atomic Layer Deposition, as well as their temperature coefficient of resistance (TCR). We finally explored the field effect (FE) in these layers.

Ultra-thin tungsten films were prepared using hotwire assisted atomic layer deposition. The film thickness ranged from 2.5 to 10 nm, as determined by spectroscopic ellipsometry and verified by scanning electron microscopy. The films were implemented in conventional Van der Pauw and circular transmission line method (CTLM) test structures, to explore the effect of film thickness on the sheet and contact resistance, temperature coefficient of resistance (TCR), and external electric field applied. All films exhibited linear current-voltage characteristics. The sheet resistance was shown to considerably vary across the wafer, due to the film thickness non-uniformity. The TCR values changed from positive to negative with decreasing the film thickness. A field-induced modulation of the sheet resistance up to ∼4.6·10 −4 V −1 was obtained for a 2.5 nm thick film, larger than that generally observed for metals.