Electrical characterization of hot-wire assisted atomic layer deposited Tungsten films

Zouw, Kees van der; Aarnink, Antonius A.I.; Schmitz, Jurriaan; Kovalgin, Alexeij Y.

doi:10.1109/icmts.2019.8730954

Cited by 2 publications

(2 citation statements)

References 31 publications

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“…The influence of film thickness on the sheet and contact resistance, temperature coefficient of resistance (TCR) and external electric field effect (FE) were studied. This work extends our previous ICMTS 2019 publication [20] by adding a detailed analysis of the W-film thickness with spectroscopic ellipsometry (SE), further verified by high resolution scanning electron microscopy (SEM). X-ray diffraction (XRD) analysis of the crystal structures of HWALD W films is additionally provided.…”

Section: Introductionsupporting

confidence: 66%

Conduction and Electric Field Effect in Ultra-Thin Tungsten Films

Zouw¹,

Aarnink²,

Schmitz³

et al. 2020

IEEE Trans. Semicond. Manufact.

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Ultra-thin tungsten films were prepared using hotwire assisted atomic layer deposition. The film thickness ranged from 2.5 to 10 nm, as determined by spectroscopic ellipsometry and verified by scanning electron microscopy. The films were implemented in conventional Van der Pauw and circular transmission line method (CTLM) test structures, to explore the effect of film thickness on the sheet and contact resistance, temperature coefficient of resistance (TCR), and external electric field applied. All films exhibited linear current-voltage characteristics. The sheet resistance was shown to considerably vary across the wafer, due to the film thickness non-uniformity. The TCR values changed from positive to negative with decreasing the film thickness. A field-induced modulation of the sheet resistance up to ∼4.6·10 −4 V −1 was obtained for a 2.5 nm thick film, larger than that generally observed for metals.

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Section: Introductionsupporting

confidence: 66%

Conduction and Electric Field Effect in Ultra-Thin Tungsten Films

Zouw¹,

Aarnink²,

Schmitz³

et al. 2020

IEEE Trans. Semicond. Manufact.

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“…This provides a pathway for exploring other relevant III-nitride combinations with the involvement of, e.g. , GaN on patterned AlN/SiO 2 . − To demonstrate this proof of concept, we use TMA and NH 3 to deposit AlN, a classic example of an ALD chemistry that easily occurs in a thermal mode. To our knowledge, although TMA has been investigated for AS-ALD of Al 2 O 3 − and is used in several ALE processes, − and ALE and AS-ALD (Ar-plasma based) of AlN have been demonstrated, this is the first demonstration of intrinsic AS-ALD of AlN.…”

Section: Introductionmentioning

confidence: 99%

Area-Selective Low-Pressure Thermal Atomic Layer Deposition of Aluminum Nitride

van der Wel,

van der Zouw,

Aarnink

et al. 2023

J. Phys. Chem. C

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This work demonstrates intrinsic area-selective deposition of AlN films by thermal atomic layer deposition (ALD). Using sequential pulses of trimethylaluminum and NH 3 at a substrate temperature of 623 K, polycrystalline AlN was selectively formed on a thin layer of sputtered AlN that was patterned on thermal SiO 2 grown on Si substrates. A pretreatment to remove native AlO x N y facilitated the selective growth of ALD-AlN. Transmission electron microscopy, X-ray photoelectron spectroscopy, spectroscopic ellipsometry, and atomic force microscopy examined the interfaces and layer thickness. As reported in this article, the deposition of AlN exhibits intrinsic selectivity, a trait that can be exploited to grow other III-nitrides selectively, such as GaN.

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Electrical characterization of hot-wire assisted atomic layer deposited Tungsten films

Cited by 2 publications

References 31 publications

Conduction and Electric Field Effect in Ultra-Thin Tungsten Films

Conduction and Electric Field Effect in Ultra-Thin Tungsten Films

Area-Selective Low-Pressure Thermal Atomic Layer Deposition of Aluminum Nitride

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