Comparisons of hot-carrier degradation behavior in SOI-LIGBT and SOI-LDMOS with different stress conditions

Liu, Siyang; Sun, Weifeng; Qian, Qinsong; Zhu, Jun‐Jie

doi:10.1016/j.sse.2010.07.010

Solid-State Electronics

2010

DOI: 10.1016/j.sse.2010.07.010

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Comparisons of hot-carrier degradation behavior in SOI-LIGBT and SOI-LDMOS with different stress conditions

Siyang Liu

Weifeng Sun

Qinsong Qian

et al.

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Cited by 9 publications

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“…However, SOI-LIGBTs usually work under high temperature, high voltage and heavy current conditions, so as to suffer seriously from the hot-carrier degradation. Our previous investigations have been reported to analyse the inner degradation mechanism of the SOI-LIGBT under different stress conditions, while the model for describing the degradation behaviour of the device is less documented [3,4].…”

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Model of hot‐carrier degradation for lateral IGBT device on SOI substrate

et al. 2013

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A novel model for hot-carrier degradation in a lateral insulated gate bipolar transistor (IGBT) device on SOI substrate (SOI-LIGBT) is presented. The setup of the model is based on the existing hot-carrier degradation mechanism in a SOI-LIGBT and assisted by a lateral DMOS device on SOI substrate (SOI-LDMOS) with completely the same structure except for the doping type in the drain area. The model parameters have been extracted by the degradation measurement results and the validity of the proposed model in a SOI-LIGBT has been also verified.

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Model of hot‐carrier degradation for lateral IGBT device on SOI substrate

et al. 2013

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Study on SOI structure irradiated by electron and annealled treatment using C–V, FTIR and PL

Zhu

Wang

et al. 2020

Superlattices and Microstructures

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Off-state avalanche-breakdown-induced on-resistance degradation in SGO–NLDMOS

Zhang¹,

Han²,

Ding³

et al. 2013

Solid-State Electronics

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Comparisons of hot-carrier degradation behavior in SOI-LIGBT and SOI-LDMOS with different stress conditions

Cited by 9 publications

References 9 publications

Model of hot‐carrier degradation for lateral IGBT device on SOI substrate

Model of hot‐carrier degradation for lateral IGBT device on SOI substrate

Study on SOI structure irradiated by electron and annealled treatment using C–V, FTIR and PL

Off-state avalanche-breakdown-induced on-resistance degradation in SGO–NLDMOS

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