Complementary organic field effect transistors by ultraviolet dielectric interface modification

Benson, Niels; Schidleja, Martin; Melzer, Christian; Schmechel, Roland; Seggern, Heinz von

doi:10.1063/1.2372702

Cited by 40 publications

(36 citation statements)

References 9 publications

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“…The results are consistent with other reports, and a plausible explanation is that UV treatment creates excess negatively charged sites on the pentacene/PMMA interface. 6,7 Accordingly, the S.S. was enlarged and the V th positively shifted. However, the linear field-effect mobility ͑ FET ͒ was not affected by UV treatment and was about 0.1 cm 2 /V s for both devices.…”

Section: Resultsmentioning

confidence: 99%

High Photoresponsivity of Pentacene-Based Organic Thin-Film Transistors with UV-Treated PMMA Dielectrics

Zan

Yen

2008

Electrochem. Solid-State Lett.

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A simple UV-treatment process for poly͑methyl methacrylate͒ ͑PMMA͒ dielectric is proposed to enhance photoresponsivity of pentacene-based organic thin-film transistors. The UV treatment creates excess negatively charged sites on the PMMA dielectric, which makes the device exhibit a large photoinduced current and prolongs persistent conductance recovery. In order to describe time-dependent photoinduced current, double-time constant equations are proposed. Based on time-constant fittings, slow-varied responses are found to be influenced by the UV treatment. The rapid-varied response is independent of gate bias and UV treatment. A plausible model for spatial carrier distribution is discussed and proposed to describe this observed phenomenon. © 2008 The Electrochemical Society. ͓DOI: 10.1149/1.2936224͔ All rights reserved. Organic thin-film transistors ͑OTFTs͒ have received intense attention due to their low cost, light weight, and low-temperature processing compatible with flexible substrates. The integration of OTFTs with other organic devices such as organic light emitting devices and organic solar cells also opens up the field of flexible optoelectronics.1,2 In this field, OTFTs not only act as field-effect transistors, but their application in phototransistors is also important for light detection and photoswitching. However, only a small number of researchers have published works on organic phototransistors. Researchers have observed reversible photocurrent and lightinduced threshold voltage shift.3-5 Pentacene-based OTFTs with Ta 2 O 5 gate dielectrics were also proposed to obtain high photoresponsivity. 4 In this paper, an approach to enhance photoresponsivity of pentacene-based OTFTs is proposed. By using poly͑methyl methacrylate͒ ͑PMMA͒ as the dielectric and applying UVlight treatment, photoresponsivity of OTFTs can be significantly enhanced. By analyzing the response lifetime, the underlying mechanism is investigated carefully. The proposed approach is simple and compatible with the development of all-organic electronics. ExperimentalFirst, the Ni/Pd bilayer was deposited on a glass substrate as a gate electrode. The PMMA was dissolved with a 95 wt % in anisole and was spun onto the gate electrodes. The following was the curing process. The glass substrate was heated with PMMA dielectric on a hot plate at 90°C for 30 min at atmosphere. The solvent was removed and the PMMA was solidified to serve as a gate dielectric. The thickness of the PMMA dielectric was about 360-370 nm. Then, some samples were exposed to UV light ͑Jelight Company, GLS-144 UV Lamp͒, with a wavelength of 175-285 nm and irradiation of 0.043 mW/cm 2 for 90 s. Both the UV-treated PMMA and the untreated ͑standard͒ PMMA dielectrics were transferred into a vacuum chamber for the deposition of 100 nm thick pentacene film and 100 nm thick gold ͑Au͒ electrodes. The device channel width ͑W͒ and length ͑L͒ were 1000 and 100 m, respectively. The illumination system was a combination of a probing bench ͑Cascade microtech, RHM-06͒ and a halogen lamp...

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Section: Resultsmentioning

confidence: 99%

High Photoresponsivity of Pentacene-Based Organic Thin-Film Transistors with UV-Treated PMMA Dielectrics

Zan

Yen

2008

Electrochem. Solid-State Lett.

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“…Previous reports have shown that the spatial and selective tuning of the ambipolar charge transport properties provides an effective way to improve the performance of complementarylike logic circuits based on ambipolar materials. 11,12 In this letter, we demonstrate conversion of the majority carrier type by thermal annealing in ambipolar OFETs based on the solution-processible quinoidal oligothiophene ͓QQT͑CN͒4͔. The fabrication of flexible organic inverters with improved performance suggests a reliable and unique approach for patterning by thermal lithography CMOS organic logic circuits with specified p-and n-region profiles in solution-processed thin films made from a monolithic organic semiconductor.…”

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confidence: 99%

Majority carrier type conversion in solution-processed organic transistors and flexible complementary logic circuits

Ribierre

Watanabe

Matsumoto

et al. 2010

Applied Physics Letters

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We report on the realization of high performance solution-processed ambipolar organic transistors based on a quinoidal oligothiophene derivative. The devices show hole and electron field-effect mobilities in air as high as 0.1 and 0.006 cm2 V−1 s−1, respectively, and can be converted from ambipolar p-type dominant to n-type transistors by thermal annealing. The conversion of the majority carrier type is assigned to strong variations in molecular packing. The demonstration of complementary flexible inverters suggests an effective strategy for patterning lateral pn-bipolar structures in solution-processed thin films made from a monolithic ambipolar organic semiconductor.

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“…Owing to this dual nature ambipolar materials open a route for the fabrication of complementary integrated circuits based on a single organic semiconductor in that one type of charge carrier transport can be selectively suppressed, for example via interface modification. [14,15] By adequately prepatterning the semiconductor/insulator interface, n-and p-type organic transistors can be produced next to each other on a common substrate and CMOS-like logic gates can thus be realized using a single organic semiconductor material. This might offer substantial processing advantages over CMOS-type logics relying on two organic semiconductors, one of p-type and the second of n-type.…”

mentioning

confidence: 99%

High‐Mobility Ambipolar Near‐Infrared Light‐Emitting Polymer Field‐Effect Transistors

Turbiez²,

et al. 2008

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Complementary organic field effect transistors by ultraviolet dielectric interface modification

Cited by 40 publications

References 9 publications

High Photoresponsivity of Pentacene-Based Organic Thin-Film Transistors with UV-Treated PMMA Dielectrics

High Photoresponsivity of Pentacene-Based Organic Thin-Film Transistors with UV-Treated PMMA Dielectrics

Majority carrier type conversion in solution-processed organic transistors and flexible complementary logic circuits

High‐Mobility Ambipolar Near‐Infrared Light‐Emitting Polymer Field‐Effect Transistors

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