The lead-free double perovskite Cs2AgBiX6 (X = Br, Cl) has recently demonstrated great potential for applications in solar cells, photodetectors, and X-ray detectors. This material is characterized by a dominant resonant absorption feature in the UV-blue spectral region, which is still under controversial discussion regarding its origin. Here, we uncover an electronic fine structure of this optical feature in Cs2AgBiBr6 thin films. A detailed temperature-resolved study combining photoluminescence (PL), photoluminescence excitation (PLE), and absorption spectroscopy reveals the existence of three optical transitions, situated approximately 100 meV around the resonance at 2.83 eV. PL measurements under pulsed excitation uncover a short-lived blue emission at the absorption resonance energy that persists up to room temperature and indicates the competition of direct emission from the resonant state and fast relaxation into the red emissive ground state. We derive a comprehensive energy scheme and suggest possible mechanisms leading to the observed fine structure splitting.

The realization of p- and n-type pentacene organic field effect transistors and an organic inverter stage is reported based on selective ultraviolet (UV) modification of the polymer dielectric in air. Apart from the UV radiation treatment, the device structures are identical. The achieved field effect carrier mobilities for both transistor types are ≈0.1cm2∕Vs. Similar performance data for both transistor types as well as an observed low current hysteresis qualify the UV treatment for organic complementary metal oxide semiconductor (O-CMOS) technology. The realized O-CMOS inverter exhibits stable operation below its supply voltage, as well as a gain of 17.

Electronic trap states at the interface of the gate insulator and the organic semiconductor play a decisive role for the current–voltage characteristic of organic field effect transistors. In this article two techniques will be introduced which eliminate and generate those trap states on SiO2 as well as polymer dielectric interfaces, respectively. Employing these interface modifications, p‐ and n‐type pentacene field‐effect transistors as well as an organic CMOS inverter with a single organic semiconductor and a single type of source–drain metallization were engineered. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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