Complete band alignment determination of InAs-GaSb broken-gap tunneling field-effect transistor hetero-junction

A novel broken-gap chemical-bonded SiC/Ti2CO2 heterojunction with band to band tunneling: first-principles investigation

“…54,55 The broken bandgap reduces the tunneling barrier, which results in a large tunneling probability ( P TB ). 56–58 The tunneling probability was obtained as, 59 in which m e is the electron effective mass, ħ represents the reduced Planck constant, and Φ TB and ω TB describe the height and width of the tunneling barrier, respectively. For the SiC/Ti 2 CO 2 heterojunction, the Φ TB and ω TB are 5.51 eV and 0.97 Å, respectively.…”

“…54,55 The broken bandgap reduces the tunneling barrier, which results in a large tunneling probability (P TB ). [56][57][58] The tunneling probability was obtained as, 59 P…”

Design, fabrication, and analysis of p-channel arsenide/antimonide hetero-junction tunnel transistors

“…Nevertheless, within the limits of the model used, the trap response time expected for this high-j gate stack on GaSb should be faster than 1ls, since traps beyond x ¼ 0.4 nm do not contribute to the overall D it . Figure 5 22 Reduction in I ON at T ¼ 150 K is attributed to increase in band-gap with decreasing temperature and thereby, increasing the barrier for tunneling from the conduction band in the source to valence band in the channel. I OFF in hetJ pTFET is 1 lA/lm, which is much higher than I OFF ¼ 3 nA/lm in GaSb homJ pTFET.…”