Complex Permittivity and Microwave Absorbing Property of Si3N4–SiC Composite Ceramic

Fully coupled electromagnetic‐thermal‐mechanical comparative simulation of direct vs hybrid microwave sintering of 3Y‐ZrO2

“…A susceptor is a material highly sensible to the microwaves. Silicon carbide is often used for susceptor components since this material exhibits high values of dielectric loss at low temperatures . Numerous researches reported a more stable heating using susceptors in hybrid or indirect heating configurations.…”

Ni-decorated SiC powders: Enhanced high-temperature dielectric properties and microwave absorption performance

“…Various methods, such as compositing, doping and surface modification, have been well attempted to enhance the loss tangent. Dielectric, electromagnetic absorption and interference shielding properties of multi-phase composites, such as SiC/CNTs [8], carbon black/SiC [9], Si 3 N 4 -SiC composite ceramics [10], porous yttria-stabilized zirconia (YSZ)/silicon carbide composites [11] and three-phase composites comprising poly(vinylidene fluoride)(PVDF), barium titanate (BT) nanoparticles and β-silicon carbide (β-SiC) whiskers [12], are investigated. Improving microwave loss factor and microwave-absorption performance have also been observed in the doped SiC with other elements, such as B [13,14], N [15][16][17], Al [18][19][20][21], Ni [22], and Al-N [23].…”

Preparation and dielectric properties of Si3N4/SiCw composite ceramic

“…The dielectric constant e 0 and e 00 of the composite ceramic increased as the level of SiCw increased. The dielectric constant decreased with increasing frequency and presented obvious frequency dispersion effect [36]. As the whisker content increased from 5 to 25 wt%, the dielectric constant e 0 increased accordingly from 13.4 to 27.8 at a frequency of 8 GHz, while e 00 increased from 0.67 to 8.07.…”

“…Xiaofei Liu et al [35] prepared SiCN-Si 3 N 4 ceramic by low-pressure chemical vapor deposition/infiltration (LPCVD/CVI), the dielectric loss (tan d) can be controlled from 0.014 to 0.899 by changing the flux ratio of C 3 H 6 . Guopeng Zheng et al [36] prepared Si 3 N 4 -SiC composite ceramics by chemical vapor infiltration (CVI), the average real part of relative complex permittivity e 0 of Si 3 N 4 -SiC increased from 3.7 to 14.9 and the relative imaginary part e 00 increased from 0.017 to 13.4 when the content of SiC increased from 0 to 10 vol%. Analogically, an excellent microwave absorbing abilities of Si 3 N 4 /SiCw composite ceramics can be expected.…”