Composition and structure of the InP{100}- (1 × 1) and -(4 × 2) surfaces

Sung, Myung Mo; Kim, C.; Bu, H.; Karpuzov, D.S.; Rabalais, J. W.

doi:10.1016/0039-6028(95)90023-3

Cited by 56 publications

(20 citation statements)

References 29 publications

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“…1,2 For example, three different surface structures were recently proposed for the clean InP͑100͒ surface. [3][4][5] The one area where these studies agree is that the true surface structure cannot be described by the missing row dimer ͑MRD͒ model 2 familiar to GaAs͑100͒-͑2ϫ4͒ and -͑4ϫ2͒. This assertion was recently supported by Pahlke et al 6 The MRD model was originally proposed for the InP͑100͒-͑2ϫ4͒ surface by Hou et al 7 Most authors studying the InP͑100͒ surface geometry have suggested a ͑4ϫ2͒ reconstructed surface.…”

Section: Introductionmentioning

confidence: 94%

“…This assertion was recently supported by Pahlke et al 6 The MRD model was originally proposed for the InP͑100͒-͑2ϫ4͒ surface by Hou et al 7 Most authors studying the InP͑100͒ surface geometry have suggested a ͑4ϫ2͒ reconstructed surface. 3,4,7 However, the orientation of the model suggested by Sung et al 3 is actually a ͑2ϫ4͒ reconstruction. MacPherson et al 5 report that the surface indeed exhibits a ͑2ϫ4͒ reconstruction.…”

Section: Introductionmentioning

confidence: 98%

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Angle-resolved photoelectron spectroscopy study of theInP(100)−(2×4)surface electronic structure

et al. 1998

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The InP͑100͒-͑2ϫ4͒ surface electronic structure was studied using angle-resolved photoelectron spectroscopy together with synchrotron radiation. We identify three surface states occurring in the gaps of the projected bulk bands. The highest level state, located at binding energy E B ϭ1.0 eV, is consistent with previous findings. The second and third states, located at E B ϭ1.8 and 4.3 eV, have not been reported previously. All three of these surface states show no discernible dispersion as compared to the surface states on InAs͑100͒-͑2ϫ4͒ and GaAs͑100͒-͑2ϫ4͒. This result suggests that the elements of the InP͑100͒-͑2ϫ4͒ surface unit cells are more isolated from each other than they are for the InAs͑100͒-͑2ϫ4͒ or the GaAs͑100͒-͑2ϫ4͒ surface.

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Section: Introductionmentioning

confidence: 94%

Section: Introductionmentioning

confidence: 98%

Angle-resolved photoelectron spectroscopy study of theInP(100)−(2×4)surface electronic structure

et al. 1998

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“…9 For P-rich (2ϫ4) a mixed In-P dimer model was proposed. 10 The ion bombardment and annealing ͑IBA͒ of InP͑001͒ has been shown [31][32][33][34] to yield an In-rich (4ϫ2)/c(8ϫ2) reconstruction. However, our cleaning procedure seems to yield a P-rich surface as we determined by AES ͓Fig.…”

Section: A the "001… Surface Of Inpmentioning

confidence: 99%

Growth and magnetic properties of Fe films on InP(001)

2002

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An investigation of the InP͑001͒ surface and the characterization of thin Fe films grown on this substrate at Ϸ150 and Ϸ300 K are presented. As substrates, highly ordered P-rich (2ϫ4) reconstructed surfaces obtained by Ar ϩ ion bombardment at Ϸ570 K were used. The growth of Fe films in the submonolayer thickness range and the magnetic properties of thin Fe films grown on P-rich (2ϫ4) InP͑001͒ are reported. We observe a uniaxial in-plane magnetic anisotropy up to an Fe thickness of Ϸ14 monolayers, which is related to the uniaxial character of the InP͑001͒ reconstruction. From the magnetization behavior we obtained the surface/ interface contribution to the uniaxial anisotropy, and deduced that very small, if any, magnetically dead layers form at the interface. Auger electron spectroscopy data reveal that about one monolayer of In segregates to the top of the growing Fe film at Ϸ300 K, but does not support a strong Fe-InP͑001͒ intermixing, in contrast to the current belief. The current-voltage characterization of patterned Fe films grown on n-InP͑001͒ shows nonrectifying contacts at room temperature.

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“…While several recent studies have addressed the atomic structure of InP͑001͒, 8,[12][13][14] much less is known about GaP͑001͒. Available experimental studies lead to different and partially contradictive conclusions about the symmetry and structure of the GaP͑001͒ surface.…”

Section: Introductionmentioning

confidence: 99%

GaP(001) and InP(001): Reflectance anisotropy and surface geometry

Esser

Schmidt

Bernholc

et al. 1999

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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We have investigated the optical anisotropy of GaP͑001͒ and InP͑001͒ surfaces. The samples were prepared by homoepitaxial metalorganic vapor phase epitaxy growth and either directly transferred into ultrahigh vacuum ͑UHV͒ or in situ capped and, after transfer, decapped in UHV by thermal desorption of a P/As capping layer. Symmetry, composition, and surface optical anisotropy were characterized by low-energy electron diffraction, Auger electron spectroscopy, and reflectance anisotropy spectroscopy. We observe (2ϫ1)/(2ϫ2)-like reconstructions for the very P-rich and (2ϫ4) reconstructions for the more cation-rich surfaces. No (4ϫ2) reconstruction could be prepared, independent of the preparation method. A comparison of the reflectance anisotropy between GaP͑001͒ and InP͑001͒ surfaces shows similar line shapes for the very cation-rich (2ϫ4) surfaces. For less cation-rich surfaces, however, we observe distinct differences between the spectra of the two systems. In both cases, different line shapes in the reflection anisotropy spectra occur for the (2ϫ4) periodicity, suggesting the existence of different (2ϫ4) geometries. The experimental results are discussed on the background of atomic structures, total energies and reflectance anisotropy spectra obtained ab initio from density-functional theory local-density approximation calculations.

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Composition and structure of the InP{100}- (1 × 1) and -(4 × 2) surfaces

Cited by 56 publications

References 29 publications

Angle-resolved photoelectron spectroscopy study of theInP(100)−(2×4)surface electronic structure

Angle-resolved photoelectron spectroscopy study of theInP(100)−(2×4)surface electronic structure

Growth and magnetic properties of Fe films on InP(001)

GaP(001) and InP(001): Reflectance anisotropy and surface geometry

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