Composition determination of multicomponent chalcogenide glassy semiconductors with X-ray fluorescence analysis

Abstract

The standard method-recording of X ray fluorescence spectra of a standard Ge 0.2 As 0.4 Se 0.4 alloy followed by evaluation of its component spectral fractions and by building of dependences x XRF = f(x) and y XRF = f(y) for the As x (Ge y Se 1 -y ) 1 -x system-was employed to determine the quantitative contents of arsenic, germanium, and selenium in the Ge t As s Se 1 -t -s glassy alloys with X ray fluorescence analysis. The accuracy of the composition's determination was ±0.0005 for both x and y. However, it was not possible to use the external standard method for determining the tellurium in As y Se 1 -y ) 1 -x Te x alloys because tellurium, arsenic, and selenium had significantly different X ray fluorescence characteristics and, hence, substitution of the arsenic or selenium for tellurium at a fixed y resulted in tellurium emission fraction changing.

Application of the Method of X-Ray Fluorescence Analysis to Determine the Composition of Glassy and Crystalline Alloys of the Systems As_xS_1-xand As_xSe_1-x

“…The standard method is a traditional XRD method when first the ratio of the line intensities of two atoms is calibrated for a known compound, and then these calibration ratios are used to determine the composition of the unknown alloy [12][13][14][15][16].…”

“…A feature of chalcogenide glassy semiconductors is that they belong to the group of compounds of variable composition, which is characterized by the fact that in their glassy state it is possible to obtain homogeneous materials in a wide range of compositions. However, the absence of long-range order in glasses leads to the exclusion of non-destructive X-ray diffraction analysis from the methods of monitoring the chemical composition of systems such as arsenic-selenium and arsenicsulfur [3][4][5]17].…”

The Architectonics Features of Heterostructures for IR Range Detectors Based on Polycrystalline Layers of Lead Chalcogenides

“…In the last several decades, a research area based on polycrystalline chalcogenides [22][23][24][25][26][27][28][29][30][31][32][33] and their solid solutions for IR photodetectors and emitters [21][22][23][24][25][26] has been successfully developing. The optimization of technological processes is accompanied by the sensitization of materials and the creation of protective oxide shells [28][29][30][31][32] consisting of different chemical compounds, namely PbO x , PbSeO 3 , bi-and tetra-oxyselenites and oxyselenates (2PbO•PbSeO 3 , 4PbO•PbSeO 3 ) [29].…”