Composition-Graded AlInP/AlGaAsSb/InP Type-II DHBTs With $f_{T}/f_{\rm MAX} = \hbox{450/510}\ \hbox{GHz}$

Xu, H.; Iverson, E. W.; Liao, Chien Chang; Cheng, K. Y.; Feng, Milton

doi:10.1109/led.2012.2224090

Cited by 9 publications

(1 citation statement)

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“…However, the electron mobility for the GaAsSb base is lower than that for the InGaAs base, which limits the high-frequency characteristics of InP/GaAsSb DHBTs [1]. In order to improve the high-frequency performance, DHBTs with a compositionor doping-graded base, such as GaAsSb [3], AlGaAsSb [4] or InGaAsSb [5]- [8], have been investigated. Particularly, DHBTs with a composition-and doping-graded InGaAsSb base provide an average electron velocity through the base and collector layers of 4 × 10 7 cm/s and a peak f T of more than 500 GHz [5].…”

Section: Introductionmentioning

confidence: 99%

Improvement of High-Frequency Characteristics of InGaAsSb-Base Double Heterojunction Bipolar Transistors by Inserting a Highly Doped GaAsSb Base Contact Layer

Kashio

Hoshi

Kurishima

et al. 2015

IEEE Electron Device Lett.

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This letter presents InP/GaAsSb/InGaAsSb/InP double heterojunction bipolar transistors (DHBTs) with a highly doped base contact layer. In order to reduce the base contact resistivity, a 3-nm-thick highly doped GaAsSb contact layer is inserted between the InP emitter and 17-nm-thick composition-and doping-graded InGaAsSb base. Fabricated DHBTs with a 0.25-µm emitter show a current gain of 32 and a high open-base breakdown voltage BV CEO of 5.2 V. The DHBTs also exhibit f T / f max = 513/637 GHz at a collector current density of 9.5 mA/µm 2 and V CE = 1 V. The f max is higher by 124 GHz than that for InP/InGaAsSb DHBTs without the GaAsSb contact layer. These results indicate that the use of the GaAsSb/InGaAsSb base structure is very effective in improving f max . Index Terms-GaAsSb, double heterojunction bipolar transistors (DHBTs), InP/InGaAsSb, highly doped base contact.

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Section: Introductionmentioning

confidence: 99%