Compositional effects on the electrical properties of decagonal Al80Mn20 and Al78Mn22 phases

Gozlan, A.; Berger, Claire; Fourcaudot, G.; Grieco, J.C.; Cyrot‐Lackmann, F.; Germi, P.

doi:10.1016/0038-1098(90)90042-a

Cited by 9 publications

(1 citation statement)

References 20 publications

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“…Besides the increase in research on the atomic structure of the so-called quasi-crystals, much interest has also arisen in their electronic properties both theoretically (see, e.g., Marcus 1986, Smith and Ashcroft 1987, Fujiwara 1989, 1990, Matsuda et a/ 1990, Fujiwara and Yokokawa 1991) and experimentally (see, e.g., Bruwiller et a1 1987, Ederer et a1 1988, Traverse et al1988, Macko era1 1989, Wagner et al1989, Gozlan et al 1990, Berger et a1 1991. To understand these properties, knowledge of the electronic structure and therefore the distributions of the valence and conduction band states may be helpful.…”

Section: Introductionmentioning

confidence: 99%

Electronic distributions of Al-Mn and Al-Mn-Si alloys

Belin¹,

Kojnok²,

Sadoc³

et al. 1992

J. Phys.: Condens. Matter

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Electronic distributions of various symmetries have been investigated for both valence and conduction bands in a series of Al-Mn and Al-Mn-Si alloys of different structural states (amorphous, quasi-crystalline or crystalline) and Mn concentrations ranging from 14 to 22 at.%. Experiments have been carried out by means of soft-X-ray emission and photoabsorption spectroscopies. This allowed the authors to provide a complete description of the valence band states and to confirm the progressive opening of a small gap in the Al-sp DOS at the Fermi level with increasing Mn concentration in the alloys. At a given Mn concentration the gap is wider for the quasi-crystalline phase than for its crystalline counterpart.

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