Comprehensive Capacitance–Voltage Simulation and Extraction Tool Including Quantum Effects for High- $k$ on SixGe1−x and InxGa1−xAs: Part II—Fits and Extraction From Experimental Data

A comprehensive technique for estimation of process-induced fixed charges and effective work function of the metal gate on high-$\kappa /{\mathrm{SiO}}_{2}$ stack

“…Devices were characterized by high-frequency (100 kHz and 1 MHz) capacitance-voltage (HFCV) measurements in parallel mode in a dark shielded chamber at room temperature using HP 4284A LCR meter. Device parameters viz the equivalent oxide thickness (EOT), flatband voltage (V FB ), substrate doping concentration N A using the minimum value of capacitance [2] and work function F Si of -p Si were estimated by modeling the series resistance corrected [12] experimental HFCV data with in-house -C V simulator incorporating quantum mechanical (QM) effect [13]. In our QM -C V simulation as shown in figure 1, Fermi-Dirac carrier statistics, thermal and doping-induced bandgap narrowing [14] and experimental value of 3.29 eV [15] for the conduction band offset for ultrathin SiO 2 /Si(100) at room temperature were taken into account.…”