Comprehensive Investigation on Electrical Properties of 4H-SiC VDMOS Under Uniaxial and Biaxial Mechanical Strains

Wei, Hongyu; Wu, Wengan; Tang, Pengyu; Yang, Guangan; Liu, Siyang; Sun, Weifeng

doi:10.23919/ispsd50666.2021.9452260

Cited by 3 publications

(2 citation statements)

References 10 publications

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“…The observed V LE D on SiC MOSFET was also consistent with the previous report. 24,25) We also noticed that the magnitude of V fb D on SiC was very close to that of The study in Fig. 5 was applied on devices of L = 100 μm as well, though data is not shown here, we obtained results in the same magnitude, suggesting that peripheric conditions of the channel had no impact on stress-induced V th change.…”

supporting

confidence: 68%

Comparative study of mechanical stress-induced flat-band voltage change in MOS capacitor and threshold voltage change in MOSFET fabricated on 4H-SiC (0001)

Chu,

Masunaga,

Shima

et al. 2024

Jpn. J. Appl. Phys.

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The impact of mechanical uniaxial stress on electrical characteristics of 4H-SiC (0001) n-type metal-oxide-semiconductor field-effect transistor (n-MOSFET) was systematically investigated by a mechanical 4-point bending method. Expected variation of field-effect mobility with stress was observed and for the first time, a direct relationship between uniaxial stress and significant change in threshold voltage (Vth) on lateral SiC MOSFET was investigated systematically. The observed change of Vth was as large as 40 mV with the stress of 170 MPa. By comparing with flat-band voltage (Vfb), it was concluded that change in Vth mainly consists of change in Vfb on n-MOS capacitor with mechanical stress. Even though possible origins of such Vfb change with stress are not clarified yet, they were suggested to be either the change in band alignment or the change in fixed charge density induced by electronic structure change.

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supporting

confidence: 68%

Comparative study of mechanical stress-induced flat-band voltage change in MOS capacitor and threshold voltage change in MOSFET fabricated on 4H-SiC (0001)

Chu,

Masunaga,

Shima

et al. 2024

Jpn. J. Appl. Phys.

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“…17) Moreover, Wei et al reported the vertical-direction electrical properties of a planar 4H-SiC MOSFET under both biaxial and uniaxial mechanical strains. 18) The results of both studies indicated that applying the appropriate stress can improve the mobility for a planer MOSFET. Furthermore, we found that the mobility of trench MOSFETs can be improved by applying internal stress to the channel; this was achieved by devising a poly-Si manufacturing method.…”

Section: Introductionmentioning

confidence: 93%

Visualization of local strain in 4H-SiC trench metal-oxide-semiconductor field-effect transistor using synchrotron nanobeam X-ray diffraction

Takeuchi

Kagoshima

Sumitani

et al. 2022

Jpn. J. Appl. Phys.

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We investigated the local strain in a silicon carbide (4H-SiC) (0001) trench metal-oxide semiconductor field-effect transistor (MOSFET) using synchrotron nanobeam X-ray diffraction (nano-XRD) at the SPring-8 BL13XU beamline. Using X-rays incident on the 4H-SiC trench cross section, diffraction measurements were performed on the (11-20) and (11-24) planes. Intensity maps of the 11-20 and 11-24 diffractions yielded images reflecting the trench structure. The spatial resolution of the 4H-SiC 11-24 intensity map in the [0001] direction was higher than that for the 11-20 diffraction because the angle of incidence was close to perpendicular to the sample. From two-dimensional reciprocal space maps of the symmetric and asymmetric diffractions, the tilt and the (11-20)- and (0004)-plane strain components were individually separated and visualized. A tensile strain of approximately 0.1% was found in the region between the trenches. These results indicate the effectiveness of nano-XRD for strain visualization in trench MOSFETs and similar electronic devices.

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Effect of the deposition sequence of Ti and W on the Ni-based Ohmic contacts to n-type 4H-SiC

Ge,

Wan,

et al. 2024

Materials Today Communications

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Comprehensive Investigation on Electrical Properties of 4H-SiC VDMOS Under Uniaxial and Biaxial Mechanical Strains

Cited by 3 publications

References 10 publications

Comparative study of mechanical stress-induced flat-band voltage change in MOS capacitor and threshold voltage change in MOSFET fabricated on 4H-SiC (0001)

Comparative study of mechanical stress-induced flat-band voltage change in MOS capacitor and threshold voltage change in MOSFET fabricated on 4H-SiC (0001)

Visualization of local strain in 4H-SiC trench metal-oxide-semiconductor field-effect transistor using synchrotron nanobeam X-ray diffraction

Effect of the deposition sequence of Ti and W on the Ni-based Ohmic contacts to n-type 4H-SiC

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