We investigated the impact of the mechanical uniaxial strain on the inversion channel mobility of lateral n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) on 4H-SiC(0001). We used custom-designed bend-holders to apply a tensile and compressive stress to the chip after MOSFET fabrication. The behavior of mobility with the two different channel directions and was investigated on the bend directions and with the tensile and compressive stress. We found that the inversion channel mobility effectively increases with the uniaxial compressive stress of the perpendicular configuration which is the drain current flow perpendicular to the bend direction. From the temperature dependence of mobility, we deduced that the enhancement of mobility is attributed to the reduction of the effective mass in 4H-SiC by introduced stress.

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We propose an experimental method for evaluating channel mobility that eliminates the parasitic series resistance in trench metal-oxidesemiconductor field-effect transistors (MOSFETs). It is found that the parasitic resistance increases with increasing temperature, which is mainly caused by optical phonon scattering in the drift layer of trench MOSFETs. The measurement method in which the current path is from the surface drain electrode to the source electrode underestimates the effective mobility because of the voltage drop caused by the drift layer resistance at the bottom of the trench gate. The proposed measurement method avoids this underestimation.

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