The FinFET effect in Silicon Carbide MOSFETs

Udrea, F.; Naydenov, K.; Kang, Hoyoul; Kato, Tomohisa; Kagoshima, Eiji; Nishiwaki, Takeshi; Fujiwara, Haruhiko; Kimoto, Tsunenobu

doi:10.23919/ispsd50666.2021.9452282

“…The use of multi-gate architectures and submicron-meter-sized fin-shaped channels can significantly increase the channel density, 38 and more fundamentally, shift the carrier transport away from the low-mobility MOS channels. 39,40 This circumvents the 𝜇 limitation in WBG/UWBG devices. FinFET and trigate devices have been demonstrated in SiC [39][40][41][42] and GaN 38 , and in both vertical MOSFETs and lateral HEMTs, with the state-of-the-art performance exceeding the 1D 𝑅 limit.…”

Section: (A)mentioning

confidence: 99%

“…39,40 This circumvents the 𝜇 limitation in WBG/UWBG devices. FinFET and trigate devices have been demonstrated in SiC [39][40][41][42] and GaN 38 , and in both vertical MOSFETs and lateral HEMTs, with the state-of-the-art performance exceeding the 1D 𝑅 limit. 19,36,[42][43][44] The device physics of these multidimensional device architectures will be elaborated in the following sections.…”

Section: (A)mentioning

confidence: 99%

“…39 Further studies reveal that the FinFET effect can allow for up to an 18 times increase in channel mobility. 40 An fin-width window of about 30-50 nm is predicted to be optimal for UNB SiC MOSFETs. 40 The FinFET effect has also been leveraged to demonstrate a vertical SiC FinFET with an R ON,SP of 0.7 Ωꞏcm 2 and BV over 1000 V. 42 When the FinFET concept is brought into HEMTs, the heterostructure fin is wrapped by the gate stack, forming a trigate control over the 2DEG channel.…”

Section: Finfet and Trigatementioning

confidence: 99%

“…40 An fin-width window of about 30-50 nm is predicted to be optimal for UNB SiC MOSFETs. 40 The FinFET effect has also been leveraged to demonstrate a vertical SiC FinFET with an R ON,SP of 0.7 Ωꞏcm 2 and BV over 1000 V. 42 When the FinFET concept is brought into HEMTs, the heterostructure fin is wrapped by the gate stack, forming a trigate control over the 2DEG channel. In AlGaN/GaN HEMTs, this narrow fin reduces the piezoelectric polarization and 2DEG density due to the partial strain relaxation in the AlGaN barrier, 83 facilitating the E-mode realization.…”

Section: Finfet and Trigatementioning

confidence: 99%

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Power semiconductor devices are key to delivering high efficiency energy conversion in power electronics systems, which is critical towards efforts in reducing energy loss, cutting carbon dioxide emissions and creating more sustainable technology. While the use of wide or ultra-wide bandgap materials will be required in order to create improved power devices, multidimensional architectures can also improve performance, regardless of the underlying material technology. In particular, multidimensional device architectures -such as superjunction, multi-channel and multi-gate technologies -can enable advances in the speed, efficiency, and form factor of power electronics systems. Here we review the development of multidimensional device architectures for efficient power electronics. We explore the rationale for using multidimensional architectures and the different architectures available. We also consider the performance limits, scaling, and material figure-of-merits of the architectures, and identify key technological challenges that need to be addressed in order to realize the full potential of the approach.

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The FinFET effect in lateral 4H-SiC and Silicon multi-gate MOSFETs

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Udrea

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This paper presents a comprehensive investigation on the role and manifestation of the FinFET effect in low voltage 4H-SiC MOSFETs as compared to their Si counterparts. For this purpose, a finite element model of a fabricated SiC FinFET with a fin width of 55 nm is constructed and calibrated to experimental data at a range of operating temperatures. The resulting TCAD model is then applied to examine the impact of the FinFET effect on the threshold voltage and the spatial variation of the carrier density and the drift mobility in the channel for a range of doping concentrations N A of the p-well. It is thereby shown that by reducing the fin width W fin from conventional values ≳ 500 nm down to an interval of optimal values ∼40 nm (keeping everything else constant), it is possible to enhance the channel mobility ∼2.5 times. This improvement is not only found to be much larger than the one predicted in Si (where it is ∼ 15% according to the TCAD model) but also arises at a larger fin width (for a given N A ). In this respect, it is demonstrated that this optimal range of fin widths can be moved to even larger, more practical values by reducing the doping of the p-well. As an alternative, the on-state performance of the gate-all-around FET is also examined in detail following a similar procedure. It is hence shown that this structure can display the FinFET effect at an even larger, nearly conventional W fin of ∼250 nm, whilst attaining a higher channel mobility and inversion layer density even than a stripe FinFET operated at the same overdrive. Thus, in light of all these advantages, the FinFET topology can play a key role in reducing the channel resistance of SiC power MOSFETs.

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The FinFET effect in Silicon Carbide MOSFETs

Cited by 12 publications

References 18 publications

Multidimensional device architectures for efficient power electronics

Multidimensional device architectures for efficient power electronics

Anisotropic Charge Transport Enabling High‐Throughput and High‐Aspect‐Ratio Wet Etching of Silicon Carbide

The FinFET effect in lateral 4H-SiC and Silicon multi-gate MOSFETs

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