Comprehensive Study of the Complex Dynamics of Forward Bias-Induced Threshold Voltage Drifts in GaN Based MIS-HEMTs by Stress/Recovery Experiments

Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics

“…So, the curves cross at 4.5 s. This suggests that all the devices after a 4.5 s stress are back to same electrons filling status. So, in the following discussion, we focus on the slow de-trapping phenomena after 4.5 s. Recently, stochastic charge trapping received more attention since it can explain the bias temperature instability (BTI) phenomena on SiO 2 /Si [18] and SiO 2 /AlGaN/GaN MIS-HEMTs [19]. These two references also discuss why the Shockley-Read-Hall modelwhich was originally conceived to describe bulk defects -cannot be used to fully explain the BTI phenomena.…”

Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs

“…An analysis of MIS-HEMT slow trapping phenomena moreover demonstrated that significant trapping effects (e.g. V TH shift) are induced by positive gate voltage, suggesting the presence of traps between AlGaN barrier and dielectric under the gate [12][13][14][15]. This result is partially confirmed by Lin et al [16].…”

Trapping characteristics and parametric shifts in lateral GaN HEMTs with SiO<inf>2</inf>/AlGaN gate stacks

“…We n transient methods are conceptually similar to Grasser in [7] with comparable techniques app [8] to HEMT structures. In the current transien and del Alamo [4], an experimental recovery t I d (t) -I d (0), is analyzed by fitting to a sum o the form where α i is the coefficient of a process asso constant τ i .…”