Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs

Rossetto, Isabella; Meneghini, Matteo; Bisi, Davide; Barbato, Alessandro; Hove, M. Van; Marcon, Denis; Wu, Tian-Li; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico

doi:10.1016/j.microrel.2015.06.130

Cited by 14 publications

(9 citation statements)

References 17 publications

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“…The variation could even change the behaviour of the device from normally‐on to normally‐off, as reported by Rossetto et al [21]. MIS‐HEMTs with room temperature chemical vapor deposition (RTCVD) or plasma‐enhanced atomic layer deposition (PEALD) SiN as the gate dielectric.…”

Section: Dynamic Performancementioning

confidence: 89%

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Review of dynamic effects and reliability of depletion and enhancement GaN HEMTs for power switching applications

Santi

Meneghini

Meneghesso

et al. 2018

IET Power Electronics

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GaN-based transistors are promising devices for power switching applications, but their unique properties require careful design of the circuit in order to achieve the best performance and reliability. The first part will focus on the characterisation of deep-level effects in enhancement-and depletion-mode HEMTs, which limit the performance of the transistor. Threshold voltage instabilities in MIS-HEMT structures, caused by charge trapping under the gate, and their dependence on SiN acting as the gate dielectric will be reviewed. ON-resistance increase, caused by charge trapping in the gate-drain access region, will then be discussed in normally off gate injection transistors, as well as the effect of the switching frequency on the trapping-de-trapping equilibrium condition. The second part of the paper will discuss possible failure modes related to operating conditions, starting with the oxidation of the surface and the inverse piezoelectric effect at high gate-drain voltage. To have a complete picture of high-field effects, the gate dielectric and passivation robustness will be investigated. Time-dependent degradation will then be analysed in both gate reverse and forward-bias conditions. Finally, failures related to off-state stress and to power dissipation and electric field during an ESD event in AlGaN/GaN-HEMTs will be discussed.

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Section: Dynamic Performancementioning

confidence: 89%

“… Effect of charge trapping under the gate (a) Threshold voltage shift, (b) Stable transconductance peak in MIS‐HEMTs with RTCVD SiN as the gatedielectric. Reprinted from [21] Microelectronics Reliability, vol. 55, no.…”

Section: Dynamic Performancementioning

confidence: 99%

Review of dynamic effects and reliability of depletion and enhancement GaN HEMTs for power switching applications

Santi

Meneghini

Meneghesso

et al. 2018

IET Power Electronics

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show abstract

“…A nitride-based gate dielectric such as SiN x can potentially improve the interface quality [ 91 , 92 ]. Recently, several researchers employed PEALD SiN x as a gate dielectric layer of GaN MIS-HEMTs and achieved improvement of power device performance [ 93 , 94 , 95 , 96 , 97 , 98 , 99 , 100 ]. This suggests that the application of ALD SiN x could extend to GaN power electronics.…”

Section: Current Research Progressmentioning

confidence: 99%

Atomic Layer Deposition of Silicon Nitride Thin Films: A Review of Recent Progress, Challenges, and Outlooks

et al. 2016

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With the continued miniaturization of devices in the semiconductor industry, atomic layer deposition (ALD) of silicon nitride thin films (SiNx) has attracted great interest due to the inherent benefits of this process compared to other silicon nitride thin film deposition techniques. These benefits include not only high conformality and atomic-scale thickness control, but also low deposition temperatures. Over the past 20 years, recognition of the remarkable features of SiNx ALD, reinforced by experimental and theoretical investigations of the underlying surface reaction mechanism, has contributed to the development and widespread use of ALD SiNx thin films in both laboratory studies and industrial applications. Such recognition has spurred ever-increasing opportunities for the applications of the SiNx ALD technique in various arenas. Nevertheless, this technique still faces a number of challenges, which should be addressed through a collaborative effort between academia and industry. It is expected that the SiNx ALD will be further perceived as an indispensable technique for scaling next-generation ultra-large-scale integration (ULSI) technology. In this review, the authors examine the current research progress, challenges and future prospects of the SiNx ALD technique.

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“…Thus, the insulating gate module allows the MISHEMT to be operated into a potentially higher gate‐overdrive, when compared to conventional HEMT devices with Schottky gate. In particular, SiO 2 or high‐ κ materials, such as SiN , Al 2 O 3 and HfO 2 have been widely studied as promising gate dielectrics for future MISHEMTs. However, in terms of reliability aspects, trapping phenomena and control of the threshold voltage ( V th ) are one of the major challenges to be understood and optimised.…”

Section: Introductionmentioning

confidence: 99%

“…In this work, we report on the comprehensive analysis of V th drift in MISHEMT structures by applying forward gate stress pulses for stress times from 1 µs to 1000 s. Contrary to previous publications, where SiO 2 , SiN and Al 2 O 3 have been studied in detail by stress bias and stress time dependent pulsed measurements , we focused on the comparison of Al 2 O 3 and HfO 2 MISHEMT devices with similar equivalent oxide thickness. Here, the matched gate capacitance of both MISHEMTs allowed for disentangling the effect of the AlGaN/GaN heterostructure itself on the V th instability from the interface and bulk aspects of the high‐ κ dielectric material.…”

Section: Introductionmentioning

confidence: 99%

Analysis of threshold voltage instability in AlGaN/GaN MISHEMTs by forward gate voltage stress pulses

Winzer

Schuster

Hentschel

et al. 2016

Physica Status Solidi (a)

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We report on the investigation of the V th drift behaviour of AlGaN/GaN MISHEMTs upon forward gate voltage stress in dependence of stress bias and stress time. The pulsed measurements allow for the evaluation of the operational regime for optimum device efficiency. We compared the effect of two different high-k gate dielectric materials with similar equivalent oxide thickness e 0 e r /t high-k on the V th instability in order to separate the influence of the heterojunction design and the high-k/GaN-cap interface from the bulk high-k. The matched gate capacitance coupling of the studied Al 2 O 3 and HfO 2 gate dielectric results in an nearly identical critical forward gate voltage, where the AlGaN barrier potential is lowered and severe threshold voltage shift (DV th ) into the positive voltage direction is induced. Beyond this critical forward voltage, detailed time-dependent stress pulse measurements from 1 ms to 1000 s revealed an immediate electron injection and trapping at the oxide/GaN interface for stress pulses with t stress ! 1 ms. The presented results of V th drift analysis demonstrate the limits of the maximum tolerable forward gate voltage of the investigated Al 2 O 3 and HfO 2 MISHEMTs, although the excellent low-leakage currents of the insulated gate would imply a potentially higher gateoverdrive.

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Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs

Cited by 14 publications

References 17 publications

Review of dynamic effects and reliability of depletion and enhancement GaN HEMTs for power switching applications

Review of dynamic effects and reliability of depletion and enhancement GaN HEMTs for power switching applications

Atomic Layer Deposition of Silicon Nitride Thin Films: A Review of Recent Progress, Challenges, and Outlooks

Analysis of threshold voltage instability in AlGaN/GaN MISHEMTs by forward gate voltage stress pulses

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