2021
DOI: 10.1021/acsami.1c12615
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Comprehensively Improved Performance of β-Ga2O3 Solar-Blind Photodetector Enabled by a Homojunction with Unique Passivation Mechanisms

Abstract: Ga 2 O 3 -based solar-blind photodetectors have been extensively investigated for a wide range of applications. However, to date, a lot of research has focused on optimizing the epitaxial technique or constructing a heterojunction, and studies concerning surface passivation, a key technique in electronic and optoelectronic devices, are severely lacking. Here, we report an ultrasensitive metal−semiconductor− metal photodetector employing a β-Ga 2 O 3 homojunction structure realized by lowenergy surface fluorine… Show more

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Cited by 58 publications
(30 citation statements)
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“…The out-of-plane X-ray diffractometer (XRD) and optical absorption spectrum (Figures S1 and S2, Supporting Information) demonstrate a β-Ga 2 O 3 single-phase structure with a (201) preferred orientation and an optical bandgap of 5.05 eV for the prepared gallium oxide films. The extracted bandgap is slightly larger than those reported in our own previous works [11,40] as well as some other literatures, [41,42] but still within the reasonable range of β-Ga 2 O 3 . [7] This discrepancy might be attributed to our continual optimization on the epitaxial growth processes, for example, the introduction of an additional high-temperature pretreatment on sapphire substrate prior to MBE, and accordingly a higher quality of β-Ga 2 O 3 epitaxial film.…”
Section: Introductioncontrasting
confidence: 43%
See 1 more Smart Citation
“…The out-of-plane X-ray diffractometer (XRD) and optical absorption spectrum (Figures S1 and S2, Supporting Information) demonstrate a β-Ga 2 O 3 single-phase structure with a (201) preferred orientation and an optical bandgap of 5.05 eV for the prepared gallium oxide films. The extracted bandgap is slightly larger than those reported in our own previous works [11,40] as well as some other literatures, [41,42] but still within the reasonable range of β-Ga 2 O 3 . [7] This discrepancy might be attributed to our continual optimization on the epitaxial growth processes, for example, the introduction of an additional high-temperature pretreatment on sapphire substrate prior to MBE, and accordingly a higher quality of β-Ga 2 O 3 epitaxial film.…”
Section: Introductioncontrasting
confidence: 43%
“…Specifically, monoclinic Ga 2 O 3 (β-Ga 2 O 3 ), the most thermodynamically stable polymorph of Ga 2 O 3 , has attracted the most attention for developing various types of solar-blind PDs in the past few years. [6][7][8][9][10][11] However, the detection sensitivities of these devices are still far lower than expected, which severely hinders their replacement of the present commercial counterparts, for example, photomultiplier tube, especially considering the fact that the signal in the solarblind DUV region is often extremely weak due to the strong absorption of the atmosphere. [9] To address this issue, continuous efforts have been devoted, and most of the works focused on improving the structural/ electrical characteristics of the β-Ga 2 O 3 material itself due to their direct impact on the PD performance.…”
Section: Introductionmentioning
confidence: 99%
“…The dark current of the PD exhibits a rising trend as the concentration of the NGQDs is increased to 6%–8% (Figure S2), resulting in a decrease in the on–off ratio. A moderate compromise of photocurrent is common and acceptable as reported in other metal oxides like ZnO and Ga 2 O 3 ; since the trapping effect acts as a double-edged sword, the long lifetime of the photocarriers is detrimental to the response speed but conducive to enhanced photoconductive gain. ,,, When considering various strategies for solving the problem of slow decay by reducing trap states, it should be taken into account that the reduction in the carrier lifetime inevitably leads to a decrease in the photoconductive gain. Despite this, the photodetecting performance of the 4%NGQDs-SNO PD still remains at a relatively high level.…”
Section: Resultsmentioning
confidence: 99%
“…Upon illumination, the deep, neutral V o states are ionized to shallow donor states V o 2+ and release two electrons, resulting in an increase in photoconductivity, while the neutralization of the V o 2+ states requires overcoming an energy barrier originating from the large lattice relaxation. The other one emphasizes the effect of the surface trap states. The adsorption and desorption of oxygen molecules can induce a high density of trap states at the surface of low-dimensional metal oxides, which promotes the separation of photogenerated pairs and the accumulation of trapped holes at the surface. Whether these PPC-related mechanisms coexist or which mechanism dominates the PPC phenomenon remains debatable and depends on the specific conditions. , But, it is clear that the long lifetime of the photocarriers induced by trap states directly contributes to the PPC effect and influences the photodetecting performance.…”
Section: Introductionmentioning
confidence: 99%
“…In particular, β-Ga 2 O 3 is an exceptional candidate for deep-UV detection. , Due to a direct wide band gap of 4.9 eV and large absorption coefficient, β-Ga 2 O 3 is an intrinsic solar-blind material and exhibits high sensitivity to deep-UV radiation. In the past decade, β-Ga 2 O 3 -based photodetectors have been widely studied on traditional rigid substrates. Recently, flexible deep-UV detectors based on β-Ga 2 O 3 have been demonstrated on flexible polymer and muscovite substrates. , However, due to the mechanism of the photoconduction effect based on a single β-Ga 2 O 3 layer, the performance can be further enhanced.…”
Section: Introductionmentioning
confidence: 99%