Computer comparison of
 n
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 p
 –
 p
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 and
 p
 +
 –
 n
 –
 n
 +
 junction silicon diodes for IMPATT oscillators

Udelson, B. J.; Ward, A. L.

doi:10.1049/el:19710496

Cited by 4 publications

(3 citation statements)

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“…IMPATT diodes of this structure have apparently rarely been fabricated. Following our suggestion [20] that the n+-p-p+ structure in Si appears promising for high efficiency, Udelson and Ward [36] reported the results of a large-signal computation which strongly supported the idea. Subsequently, Ying [37] reported achieving 12-percent efficiency at 8.7 GHz in an n+-p-p+ Si structure, which is distinguishably higher than the best reported for the complementary structure.…”

mentioning

confidence: 60%

Nonlinear properties of IMPATT devices

Schroeder

Haddad

1973

Proc. IEEE

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153This means economical construction and the ability to fabricate displays with a large number of elements in a wide range of sizes and shapes. For nematic liquid-crystal displays the layer of liquid-crystal material must be uniformly thin. This creates difficulties in fabricating large-area displays.The liquid-crystal display has one important advantage.The switching power required is in the range 10-3 to lW2 W/cm2, making it very compatible with integrated driving circuits [4]. By comparison, the liquid-vapor display requires about 2 W/cm*. While this is much larger than the liquidcrystal requirement it is nevertheless competitive with other types of displays [SI, [9]-[13].Abstract-The basic principles of IMPATT diodes as microwave devices are reviewed and the current status of these devices concerning power output and e5ciency is given. The main purpose of this paper, however, is to discuss the nonlinear properties of these diodes which are useful in the design of amplifiers, oscillators, and other microwave devices. The main results of this paper are obtained from a digital computer analysis where an approximate, but realistic, diode model is employed. A detailed comparison of complementary silicon diodes as well as GaAs diodes concerning power output and efficiency is given. The effects of doping profile, current density, temperature, and material parameters on the performance of these devices have been investigated and are sammarized. Saturation effects which limit the efficiency and power output of these devices are described and optimum efficiencies which can be achieved for various doping profiles are given. A comparison between singlesided and double-drift diodes in both silicon and GaAs is also presented. The Editor.This inviled paper is one of a series planned on fopia of general infer&work was supported by the Air Force Systems Command's Rome Air

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mentioning

confidence: 60%

Nonlinear properties of IMPATT devices

Schroeder

Haddad

1973

Proc. IEEE

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“…Further, the extent of the un-depleted region between the edge of the depletion region and interface of epitaxy and substrate (un-swept epitaxy) which contributes positive resistance and thereby causes serious power loss is expected to be smaller in GaN-based p ++ n n ++ diode, because of higher mobility of electrons than that of holes in GaN [10]. Moreover, for any semiconductor, the avalanche zone width is smallest when the structure is chosen so that the carrier with highest ionization rate drifts towards the junction [11]. It was observed that avalanche zone of n ++ p p ++ structure is narrower than its complimentary structure in Si IMPATTs [11] which leads the higher efficiency in n ++ p p ++ Si IMPATTs.…”

Section: Computer Simulation Methodologiesmentioning

confidence: 99%

“…Moreover, for any semiconductor, the avalanche zone width is smallest when the structure is chosen so that the carrier with highest ionization rate drifts towards the junction [11]. It was observed that avalanche zone of n ++ p p ++ structure is narrower than its complimentary structure in Si IMPATTs [11] which leads the higher efficiency in n ++ p p ++ Si IMPATTs. While the situation is just reversed in InP- and GaAs-based SDR IMPATTs [12, 13].…”

Section: Computer Simulation Methodologiesmentioning

confidence: 99%

Optically modulated III–V nitride-based high-power IMPact Avalanche Transit Time oscillator at Millimeter-wave window frequency

Mukherjee

Roy

2009

Int. J. Microw. Wireless Technol.

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Extensive simulation experiments are carried out for the first time, to study the optical modulation of the high- frequency characteristics of III–V GaN-(gallium nitride) based top-mounted and flip-chip IMPact Avalanche Transit Time (IMPATT) oscillators at MM-wave window frequency (140.0 GHz). It is found that the un-illuminated GaN IMPATT is capable of delivering a RF power of 5.6 W with an efficiency of 23.5% at 145.0 GHz. Frequency up-chirping of 6.0 GHz and a degradation of RF power output by almost 15.0% are further observed in case of photo-illuminated FC IMPATT. The study reveals that compared to predominate electron photocurrent in top-mounted IMPATT, photo-generated leakage current dominated by hole in flip-chip IMPATT has more pronounced effect on the GaN-based device as regards the frequency chirping and decrease of negative conductance and total negative resistance per unit area of the device. The inequality in the magnitudes of electron and hole ionization rates in the wide band gap semiconductor has been found to be correlated with the above results. The study reveals that GaN IMPATT is a potential candidate for replacing conventional IMPATTs at high-frequency operation. These results are useful for practical realization of optically controlled GaN-based high-power IMPATTs for application in MM-wave communication systems.

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Invited paper. Avalanche diode oscillators. II. Capabilities and limitations.

Culshaw

Giblin

1975

International Journal of Electronics

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Computer comparison of n ⁺ – p – p ⁺ and p ⁺ – n – n ⁺ junction silicon diodes for IMPATT oscillators

Cited by 4 publications

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Nonlinear properties of IMPATT devices

Nonlinear properties of IMPATT devices

Optically modulated III–V nitride-based high-power IMPact Avalanche Transit Time oscillator at Millimeter-wave window frequency

Invited paper. Avalanche diode oscillators. II. Capabilities and limitations.

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Computer comparison of n + – p – p + and p + – n – n + junction silicon diodes for IMPATT oscillators

Cited by 4 publications

References 0 publications

Nonlinear properties of IMPATT devices

Nonlinear properties of IMPATT devices

Optically modulated III–V nitride-based high-power IMPact Avalanche Transit Time oscillator at Millimeter-wave window frequency

Invited paper. Avalanche diode oscillators. II. Capabilities and limitations.

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Computer comparison of n ⁺ – p – p ⁺ and p ⁺ – n – n ⁺ junction silicon diodes for IMPATT oscillators