Computer simulation of ionizing radiation burnout in power MOSFETs

The effects of ionizing radiation on the breakdown voltage of p-channel power MOSFETs

“…As a result, practically instantaneous generation of p occurred for subsequent measurement. When the total dose D is accumulated over time, as it is in the natural space environment, (1)(2)(3)(4)(5)(6)(7)(8)(9) it can be expected that electric field compensation due to accumulated positive charge will be significant even at very low D. Thus, in general, it can be expected that p cr i t will be less than that given by (1)(2)(3)(4)(5)(6)(7)(8), and the corresponding maximum values of N ot and AV ot predicted by (1-3) through…”

“…In all other instances, however, permission must be obtained from the author. devices typically are less sensitive to gamma-dot [1] and single-event burnout [2], and may have a smaller threshold-voltage shift than n-channel devices under typical bias conditions [3]. When either an n-or a p-channel device can be used in a circuit, these advantages may offset the disadvantage of higher on-resistance of the p-channel device.…”

“…For D > 100 krad(Si), (1)(2)(3)(4), and thus (1)(2)(3)(4)(5), are no longer valid because p alters the local electric field in the oxide. Since f depends on local electric field only, the charge generation process is not uniform throughout the oxide for large p. This topic is covered in more detail in section 1.2.6.…”

Simulation aided hardening of N-channel power MOSFETs to prevent single event burnout

“…Wrobel and Beutler later [2] proposed some solutions for current induced avalanche in silicon power semiconductors. In 1988, Keshavarz et al developed a computer simulation model (BAMBI) capable of predicting device burnout under a critical radiation dose rate [3]. Reduction of the lateral device size and decrease of the emitter doping density seemed to be effective in decreasing dose rate susceptibility of N-channel power MOSFETs [4].…”

Analysis study of sensitive volume and triggering criteria of single‐event burnout in super‐junction metal‐oxide semiconductor field‐effect transistors

“…Single‐event burnout (SEB) is one of the catastrophic effects that could cause power device failure in space systems. Heavy‐ions induced destructive failures in power MOSFETs have been extensively studied and are related to the existence of a parasitic bipolar junction transistor inherent to the device [1, 2]. Destructive electrical failures have already been observed in insulated gate bipolar transistors (IGBTs) [3] and those induced by heavy ions were highlighted in 1992 and 1993 by Rockwell and Boeing Company [4].…”