Concentration dependence of the hall factor in n-type silicon

Kirnas, I.G.; Kurilo, P. M.; Litovchenko, P.G.; Lutsyak, V. S.; Nitsovich, V. M.

doi:10.1002/pssa.2210230250

Cited by 17 publications

(12 citation statements)

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“…1(b) at 300 K as a function of carrier concentration, which can be tuned in our calculations by changing the chemical potential. At low carrier density, our computed Hall factor is very close to the accepted value of ∼1.15 in n-type Si [7]. The computed Hall factor is within ∼10% of experiment at all carrier concentrations, a noteworthy result for a calculation without adjustable parameters.…”

Section: A Siliconsupporting

confidence: 83%

“…Experimentally, magnetotransport has been studied extensively in metals [2] and simple semiconductors such as Si [7][8][9][10][11][12] and GaAs [13][14][15]. More recently, measurements on two-dimensional materials have shown unconventional behaviors, such as large nonsaturating MR at high fields in graphene [16][17][18] and WTe 2 [19], and various studies have shown an interplay between band-structure topology and magnetotransport, including the chiral anomaly and negative MR in topological semimetals [20][21][22].…”

Section: Introductionmentioning

confidence: 99%

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Magnetotransport in semiconductors and two-dimensional materials from first principles

et al. 2021

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We demonstrate a first-principles method to study magnetotransport in materials by solving the Boltzmann transport equation (BTE) in the presence of an external magnetic field. Our approach employs ab initio electronphonon interactions and takes spin-orbit coupling into account. We apply our method to various semiconductors (Si and GaAs) and two-dimensional (2D) materials (graphene) as representative case studies. The magnetoresistance, Hall mobility, and Hall factor in Si and GaAs are in very good agreement with experiments. In graphene, our method predicts a large magnetoresistance, consistent with experiments. Analysis of the steady-state electron occupations in graphene shows the dominant role of optical phonon scattering and the breaking of the relaxation time approximation. Our paper provides a detailed understanding of the microscopic mechanisms governing magnetotransport coefficients, establishing the BTE in a magnetic field as a broadly applicable first-principles tool to investigate transport in semiconductors and 2D materials.

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Section: A Siliconsupporting

confidence: 83%

Section: Introductionmentioning

confidence: 99%

Magnetotransport in semiconductors and two-dimensional materials from first principles

et al. 2021

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“…The electron Hall factor versus donor density for 77 K and 300 K. Solid lines show the results of calculations. Symbols represent experimental data(Kirnas et al [1974]). Fig.…”

mentioning

confidence: 99%

SILICON (Si)

Levinshteǐn

Rumyantsev

1996

Handbook Series on Semiconductor Parameters

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“…Where r is the Hall scattering factor, which depends on the temperature and the carrier concentration, and q is the charge of the carrier, including the sign of the carrier concentration. The Hall scattering factor, for Si, takes values close to the unity for both holes 117 and electrons 118 . During this thesis, ≈ 1 for all calculations.…”

Section: Resistivity and Hall Effect: The Van Der Pauw Configurationmentioning

confidence: 97%

Near Infrared Detectors Based on Silicon Supersaturated with Transition Metals

Álvarez¹

2021

Springer Theses

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I also have to thank many people from France, where I spent six wonderful months of my life doing my internship in STMicroelectronics. I felt very welcome from the first day. Although not from France, thanks to Rodrigo Blasco, classmate from the Master's degree, who introduced some very good friends in Grenoble: Akhil, Marion, Nathaniel, Mada, Saptarshi, with whom I have shared great moments. To my neighbours David Bastian and Clarie Paris, because they saved me from really awful moments up there in France. They welcomed me as a friend when I could not even speak French. At STMicroelectronics, to all the people that made possible the project, in special to François Roy and Olivier Noblanc, for believing in the project from the first day. The huge time dedication and effort of my workmates must be acknowledged as well: Andrej Suler, Boris Rodrigues, Sonnarith Chhun, Thomas Dalleau, Romuald, Bastien, Carlos, Nils, Yolenne, and so many people from the fabrication and characterisation processes, which pushed the wafers into the fab to deliver them on time. Finally, from CEA-LETI (Grenoble), special thanks to Sébastien Kerdiles and Pablo Acosta Alba. They were always helpful and I could learn most of my knowledge regarding the recrystallization processes and laser interaction with matter, opening a new and fascinating world to me.

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Concentration dependence of the hall factor in n-type silicon

Cited by 17 publications

References 17 publications

Magnetotransport in semiconductors and two-dimensional materials from first principles

Magnetotransport in semiconductors and two-dimensional materials from first principles

SILICON (Si)

Near Infrared Detectors Based on Silicon Supersaturated with Transition Metals

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