Conduction switching in aluminum nitride thin films containing Al nanocrystals

Liu, Y.; Chen, T. P.; Lau, H. W.; Liu, Ding; Yang, Ming; Wong, Jen It; Zhang, Sam; Li, Y. B.

doi:10.1007/s00339-008-4812-8

Cited by 3 publications

(2 citation statements)

References 15 publications

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“…23: a) Capacitance-type and b) crossbars type ofRERAM is built as a sandwich of metal oxide between two arrays ofelectrodes.…”

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Electrical properties and memory applications of Al-rich Al-based dielectric thin films

Zhu¹

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First and foremost, I gratefully appreciated Nanyang Technological University (NTU) for providing me with the funding sources and conductive working environment that made my Ph.D. work possible. Secondly, I want to thank my supervisor Dr. Chen Tupei. It has been an honor to be his Ph.D. student where he had taught me, both consciously and unconsciously sharing of his invaluable experience and advices. I sincerely appreciate all his contributions of time, ideas, and funding to make my Ph.D. experience productive and stimulating. The members of the Chen Tupei's group have contributed immensely to my personal and professional time at NTU. The group has been a source of friendships as well as good advice and collaboration. My time at NTU was made enjoyable in large part due to the many friends and groups that became a part of my life. I would like to acknowledge honorary group member prof. Liu Yang who was here on sabbatical a couple years ago, where we worked together on the charging effect experiments and was very much appreciated for his enthusiasm, intensity, willingness to teach me the way for experiment setup and results analysis. I am pleased to have the pleasure to work alongside with my past and present group members that consisted of graduate students Dr.

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“…23: a) Capacitance-type and b) crossbars type ofRERAM is built as a sandwich of metal oxide between two arrays ofelectrodes.…”

mentioning

confidence: 99%

“…23 shows the current-voltage (/-V) characteristics of the device. As seen in the figure, when the voltage is swept from 0 V to +30 V and then from +30 V to 0 V, the device exhibits a hysteresis with a large difference in the current at a lower voltage (e.g., + 5 V).…”

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Electrical properties and memory applications of Al-rich Al-based dielectric thin films

Zhu¹

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Current fluctuations in three-dimensionally stacked Si nanocrystals thin films

Zhou

Uchida

Oda

2010

Applied Physics Letters

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In this letter, we report a phenomenon of the current fluctuations by measuring lateral conduction of the three-dimensionally stacked Si nanocrystal (SiNC) thin films based on thin film transistor structures. Through measuring current-voltage (I-V) characteristics, drain-source current (Ids) exhibits fluctuations in particular gate voltage (Vg) and drain voltage (Vds) ranges. The experimental results show that the characteristics of the current fluctuations are changed with changing the charging situations of the SiNC thin films. The phenomenon of the current fluctuations can be well explained by the model that the conduction is dominated by the charging/discharging processes of those SiNCs which exist in the intersection of the several current paths.

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Synthesis and Characterization of Nanocrystals and Nanoparticles

Liu¹

2016

Semiconductor Nanocrystals and Metal Nanoparticles

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Conduction switching in aluminum nitride thin films containing Al nanocrystals

Cited by 3 publications

References 15 publications

Electrical properties and memory applications of Al-rich Al-based dielectric thin films

Electrical properties and memory applications of Al-rich Al-based dielectric thin films

Current fluctuations in three-dimensionally stacked Si nanocrystals thin films

Synthesis and Characterization of Nanocrystals and Nanoparticles

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