In the recent past, a variety of scanning-probe techniques [1][2][3] have been employed to generate nanometer-size structures on semiconducting, [4][5][6][7][8][9][10] metallic, [11,12] and organic surfaces. [13][14][15][16][17][18][19] In general, these methods utilize the proximity of the scanning probe to generate an intense electric field (ca. 10 9 V m -1 ) by applying a relatively low bias of the order of a few volts. The oxidation of silicon in air using surface adsorbed water as the medium between tip and substrate has been studied most extensively. [4][5][6][7][8][9][10] Field-induced techniques have been employed to pattern larger areas in parallel through the use of a stamp coated with conducting material. [20][21][22] The ultimate lateral resolution of field-induced lithography is directly related to the dimensions of the protruding features of the stamp or the sharpness of the scanning probe. Recently, there have been ongoing efforts to replace the water in the tip/substrate gap with organic solvents in order to explore novel field-induced chemical reactions. [23][24][25][26][27][28][29] For example, the deposition of etch resistant features was previously demonstrated in our laboratories [24] using common solvents such as toluene, n-octane, ethyl alcohol, and dioxane as the medium between the sample and the tip of an atomic force microscope (AFM) operated in fluid. Similarly, recent work was performed by Garcia and co-workers [23,26] using an ethyl alcohol meniscus in the tip/substrate gap. Most recently, the same group has achieved < 5 nm resolution using a solvent meniscus condensed from octane vapour.[27] Of particular relevance to our work, are the findings reported by Hersam and co-workers [28,29] for contact mode patterning in hexadecane on H:Si(111). Both the growth kinetics and the chemical behavior of the deposited features were consistent with field induced oxidation (FIO) of silicon. The authors conclude that oxidation of the silicon surface occurs in the meniscus formed between the probe and the surface by the water dissolved in the fluid, with minimal effects on the reaction from the surrounding solvent. It is important to note that the water content in hexadecane is reported to be three-fold higher than that found in n-octane at same pressure and humidity.[30]In the present work, the role of surface hydrophobocity in the high field scanning probe nanolithography in hexadecane is investigated. A schematic representation of the setup employed is shown in Figure 1a. In this setup, both the probe of the atomic force microscope and the sample are immersed in the solvent to carry out the patterning and the initial imaging of the nanostructures. For patterning, a potential difference is applied between the probe and the sample (positive on the sample) while the tip is translated across the desired location kept in close proximity to the surface. The results obtained after patterning both a hydrophilic silicon oxide surface (contact angle ca. 0°) and hydrophobic TMS terminated surface (contact ...