Ambient liquid phase atomic force microscope (AFM) techniques for nanopatterning organic molecules on silicon through direct Si-C bonds rely on reactions that are in direct competition with spurious oxidation. We study the effectiveness of an inert hydrophobic organic solvent at suppressing oxidation of hydrogen-passivated silicon under ambient conditions. Nanometer scale features were fabricated on an H:Si(111) substrate using a conductive AFM in hexadecane. The patterned features show chemical and kinetic behavior consistent with field induced oxidation (FIO) in air. The mechanism for FIO in hexadecane is discussed.

Conductive atomic force microscope (AFM) nanopatterning on hydrogen‐terminated silicon in a hydrophobic organic solvent under ambient conditions produces features consistent with AFM field‐induced oxidation. The growth rate of the oxide features (see figure) exhibits modulation consistent with a space‐charge‐limited growth mechanism.

Organic functionalization of silicon holds promise for a variety of applications ranging from molecular electronics to biosensing. Because the performance and reliability of organosilicon devices will be intimately tied to the detailed structure of the organic adlayers, it is imperative to develop systematic strategies for forming and characterizing self-assembled monolayers (SAMs) on silicon with submolecular spatial resolution. In this study, we use 4-bromostyrene for the photochemical growth of Br-terminated SAMs on Si(111). A variety of experimental and theoretical techniques including atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), X-ray reflectivity (XRR), X-ray standing waves (XSW), X-ray fluorescence (XRF), and density functional theory (DFT) have been employed to determine the coverage and conformation of the 4-bromostryene molecules within the SAM. In particular, AFM verifies a continuous and atomically flat SAM, and the XRR data indicate a SAM thickness of 8.50 A and a molecular coverage of 46% of the surface silicon atoms. Because the DFT calculations indicate a molecular length of 8.89 A, the measured XRR thickness implies a molecular tilt angle of approximately 17 degrees. The XRR analysis also suggests that the Br atoms are preserved on top of the SAM in agreement with XPS measurements that show bromine bound solely to carbon and not to silicon. XRF reveals a Br atomic coverage of 50%, again in close agreement to that found by XRR. Single-crystal Bragg diffraction XSW is used to generate a three-dimensional map of the Br distribution within the SAM, which in conjunction with the XRR result suggests that the 4-bromostyrene molecules are tilted such that the Br atoms are located over the T4 sites at a height of 8.50 A above the top bulklike Si(111) layer. The direction of molecular tilt toward the T4 sites is consistent with that predicted by the DFT calculation. Overall, through this unique suite of complementary structural characterization techniques, it is concluded that the Br functional handle is preserved at the top of the SAM and is available for further substitutional chemistry.

No abstract

Field induced oxide (FIO) nanopatterning of hydrogen passivated silicon surfaces with an atomic force microscope (AFM) has been controlled by laser irradiation. Specifically, local oxidation on H:Si(111) surfaces can be fully suppressed or activated by toggling a laser that is illuminating a lightly doped silicon AFM cantilever. The nanopatterning mechanism is attributed to the control of the free carrier concentration in the AFM probe by the laser. When the laser is toggled off, charge injection is terminated, thus eliminating the electrochemical reactions required for oxide formation. Laser assisted FIO provides an alternative and flexible means for controlling oxide nanopatterning.