Confirmation of calculated error rates in a logic circuit using a pulsed laser

Buchner, S.; Melinger, Joseph S.; McMorrow, D.; Baze, M.P.; Bartholet, W.G.

doi:10.1109/redw.1995.483374

Cited by 3 publications

(2 citation statements)

References 2 publications

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“…The densities and distances of the well contact of these inverters were the same to maintain the same well voltage. Very early, Kaul et al [35] and Buchner and Baze [36] cited the SET pulse-width as a key factor determining the vulnerability of combinational circuitry. Gadlage et al [37] also pointed out that a key factor affecting soft-error rates is the time duration of SET induced by heavy ions.…”

Section: Methodsmentioning

confidence: 99%

Effect of temperature on heavy ion-induced single event transient on 16-nm FinFET inverter chains

Li¹,

Chi²,

Yan³

et al. 2023

Chinese Phys. B

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In this work, the variation of single event transient (SET) pulse width for high-LET heavy ion irradiation in 16 nm bulk silicon Fin Field-Effect Transistor (FinFET) inverter chains with different driven strengths have been measured at different temperatures. Three-dimensional technology computer-aided design simulations are carried out to study the variation of SET pulse width and saturation current with temperature. Experimental and simulation results indicated that the increase in temperature would enhance the parasitic bipolar effect of bulk FinFET technology, resulting in the increase of SET pulse width. On the other hand, the increase in inverter driven strength will change the layout topology, which has a complex impact on the SET temperature effects of FinFET inverter chains. The experimental and simulation results show that the device with the strongest driven strength has the least dependence on temperature.

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Section: Methodsmentioning

confidence: 99%

Effect of temperature on heavy ion-induced single event transient on 16-nm FinFET inverter chains

Li¹,

Chi²,

Yan³

et al. 2023

Chinese Phys. B

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show abstract

“…Additional details about this experiment are available in the workshop record of these proceedings. [5] Since the efficiency of the laser at producing bit errors is less that 100% all data were normalized to the error rate for register D l which has a propagation probability to node DGAP of 1 .O. Table 1 below compares the calculated and experimentally obtained data.…”

Section: Comparison With Experimentsmentioning

confidence: 99%