Constant &lt;italic&gt;ΔT&lt;sub&gt;j&lt;/sub&gt;
                  &lt;/italic&gt; Power Cycling Strategy in DC Mode for Top-Metal and Bond-Wire Contacts Degradation Investigations

Tran, Son-Ha; Khatir, Zoubir; Lallemand, Richard; Ibrahim, Ali; Ousten, Jean-Pierre; Ewanchuk, Jeffrey; Mollov, Stefan

doi:10.1109/tpel.2018.2847234

Cited by 20 publications

(13 citation statements)

References 14 publications

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“…This in such a way that the increase in V ce is only due to the topside interconnections. Full details on test methodology are given in 10 .…”

Section: General Methodologymentioning

confidence: 99%

“…Accelerated aging tests applied to insulated-gate-bipolar-transistor power modules (IGBTs) have revealed two main failure mechanisms: the bond-wire degradations (heel-crack or lift-off) and solder delamination (die or DBC attach) [3][4][5] . Nevertheless, such aging tests are performed under single and fixed load conditions 3,4,6,7 and lead to empirical lifetime models [8][9][10] . Concerning the stress counting, the most popular method is the rainflow method that is widely used for on-line estimation of the remaining useful lifetime 11,12 .…”

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confidence: 99%

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Effect of load sequence interaction on bond-wire lifetime due to power cycling

Khatir

Tran

Ibrahim

et al. 2021

Sci Rep

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Experimental investigations on the effects of load sequence on degradations of bond-wire contacts of Insulated Gate Bipolar Transistors power modules are reported in this paper. Both the junction temperature swing ($$\Delta T_{j}$$ Δ T j ) and the heating duration ($$t_{ON}$$ t ON ) are investigated. First, power cycling tests with single conditions (in $$\Delta T_{j}$$ Δ T j and $$t_{ON}$$ t ON ), are performed in order to serve as test references. Then, combined power cycling tests with two-level stress conditions have been done sequentially. These tests are carried-out in the two sequences: low stress/high stress (LH) and high stress/low stress (HL) for both $$\Delta T_{j}$$ Δ T j and $$t_{ON}$$ t ON . The tests conducted show that a sequencing in $$\Delta T_{j}$$ Δ T j regardless of the direction “high-low” or “low–high” leads to an acceleration of degradations and so, to shorter lifetimes. This is more pronounced when the difference between the stress levels is large. With regard to the heating duration ($$t_{ON}$$ t ON ), the effect seems insignificant. However, it is necessary to confirm the effect of this last parameter by additional tests.

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“…This in such a way that the increase in V ce is only due to the topside interconnections. Full details on test methodology are given in 10 .…”

Section: General Methodologymentioning

confidence: 99%

mentioning

confidence: 99%

Effect of load sequence interaction on bond-wire lifetime due to power cycling

Khatir

Tran

Ibrahim

et al. 2021

Sci Rep

Self Cite

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“…Four control strategies can be adopted while running DC power cycling test [110,111]. These strategies are constantturn-on-time, constant peak-to-peak case temperature, constant power loss, and constant peak-to-peak junction temperature.…”

Section: ) DC Power Cylcling Control Strategiesmentioning

confidence: 99%

A Review on IGBT Module Failure Modes and Lifetime Testing

2021

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“…Generally, the wear-out failure of power electronics devices is evaluated by Physics-of-Failure (POF) analysis after a power cycling test (PCT) or thermal shock test (TST) [9][10] [11]. However, the POF analysis is much complex and expensive for application in field reliability and it cannot predict the lifetime of power electronics.…”

Section: Introductionmentioning

confidence: 99%

Real-Time Acoustic Emission Monitoring of Wear-Out Failure in SiC Power Electronic Devices During Power Cycling Tests

Choe

Chen

Nagao

et al. 2021

IEEE Trans. Power Electron.

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In the study, acoustic emission (AE) was applied to monitor the wear-out failure in discrete SiC Schottky barrier diodes (SBD) devices with a Ag sinter die attach to successfully monitor the real-time progress of failure of Al ribbons for the first time. After eliminating background AE noise including the power on-off switch and the ambient noise via a noise filtering process, AE signals were successfully collected for the SiC devices during a power cycling test. Furthermore, AE monitoring was compared to the traditional failure monitoring method using forward voltage. Physics-of-Failure (POF) analysis was performed, and fatigue cracks and lift-off in Al ribbons were confirmed as the dominant failure modes for the discrete devices. Specifically, AE counts that correspond to one of the time-domain parameters of AE signals increased with power cycling, thereby corresponding to the observed fatigue cracks in Al ribbons leading to lift-off failure. Additionally, the AE count rate was highly correlated with the crack growth rate. Based on the relationship between an AE count rate and fatigue crack growth rate, the results indicate that AE monitoring can be used to understand the fatigue propagation in Al ribbons (i.e., failure mechanism) and also as an early warning before catastrophic lift-off fracture for power electronic devices.

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Constant <italic>ΔT<sub>j</sub> </italic> Power Cycling Strategy in DC Mode for Top-Metal and Bond-Wire Contacts Degradation Investigations

Cited by 20 publications

References 14 publications

Effect of load sequence interaction on bond-wire lifetime due to power cycling

Effect of load sequence interaction on bond-wire lifetime due to power cycling

A Review on IGBT Module Failure Modes and Lifetime Testing

Real-Time Acoustic Emission Monitoring of Wear-Out Failure in SiC Power Electronic Devices During Power Cycling Tests

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