Construction of a promethium-147 atomic battery

Flicker, H.; Loferski, J. J.; Elleman, T.S.

doi:10.1109/t-ed.1964.15271

Cited by 62 publications

(20 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…For the highest τ SR = 10 −7 s, η decreases with decreasing d. The highest efficiency attainable, η = 7.25 %, is achieved for τ SR = 10 −7 s and d = 100 µm, and the lowest value of 0.51 % is realized for τ SR = 10 Thus, we conclude that a 147 Pm/GaAs-based betaconverter is not as efficient as a 3 H/GaAs-based one. Perhaps, the very small efficiency of the 147 Pm/GaAs battery obtained in [5] is due to the small thickness of GaAs and small lifiteme τ SR . The same applies also to the cases when, instead of GaAs, other direct-bandgap semiconductors are used.…”

Section: Calculation Of the Attainablementioning

confidence: 99%

Analysis of the attainable efficiency of a direct-bandgap betavoltaic element

Sachenko

Shkrebtii

Korkishko

et al. 2015

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Conversion of energy of beta-particles into electric energy in a p-n junction based on directbandgap semiconductors, such as GaAs, considering realistic semiconductor system parameters is analyzed. An expression for the collection coefficient, Q, of the electron-hole pairs generated by beta-electrons is derived taking into account the existence of the dead layer. We show that the collection coefficient of beta-electrons emitted by a 3 H-source to a GaAs p-n junction is close to 1 in a broad range of electron lifetimes in the junction, ranging from 10 −9 to 10 −7 s. For the combination 147 Pm/GaAs, Q is relatively large (≥ 0.4) only for quite long lifetimes (about 10 −7 s) and large thicknesses (about 100 µm) of GaAs p-n junctions. For realistic lifetimes of minority carriers and their diffusion coefficients, the open-circuit voltage realized due to the irradiation of a GaAs p-n junction by beta-particles is obtained. The attainable beta-conversion efficiency η in the case of a 3 H/GaAs combination is found to exceed that of the 147 Pm/GaAs combination.

show abstract

Section: Calculation Of the Attainablementioning

confidence: 99%

Analysis of the attainable efficiency of a direct-bandgap betavoltaic element

Sachenko

Shkrebtii

Korkishko

et al. 2015

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…Microbatteries for such applications require high power density and high energy capacity radioisotope fuels. Thin film 147 Pm is a very suitable fuel for such microbatteries because of its high P g,dens (≈ 2.05 W/cc at 830 curie/g) [28] and long τ 1/2 (2.6 years). Even though the 147 Pm maximum radiation energy of 200 keV poses a slightly increased radiation safety risk, 147 Pm powered betavoltaic microbatteries have been proven safe enough to be deployed widely in implantable cardiac pacemakers.…”

Section: Pm Micropower Generationmentioning

confidence: 99%

Radioisotope Thin-Film Powered Microsystems

Duggirala

Lal

Radhakrishnan

2010

MEMS Reference Shelf

View full text Add to dashboard Cite

“…Прямое преобразование энергии радиоактивных изо-топов заключается в том, что испускаемые ими β-электроны генерируют в полупроводнике электронно-дырочные пары, которые разделяются электрическим полем p−n-перехода или контакта металл−полупро-водник [1][2][3][4][5][6][7][8]. Возникает β-вольтаический эффект.…”

Section: Introductionunclassified

“…В научной литературе по β-вольтаическим источникам питания [1][2][3][4][5][6][7][8] ищутся пути повышения эффективности преобразования. Одним из направлений достижения этой цели является снижение рекомбинационных по-терь.…”

Section: Introductionunclassified