2009
DOI: 10.1116/1.3071846
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Contact etch stop a-SixNy:H layer: A key factor for single polysilicon flash memory data retention

Abstract: Articles you may be interested inCharge trapping properties of the HfO 2 layer with various thicknesses for charge trap flash memory applications Appl. Phys. Lett. 96, 093506 (2010); 10.1063/1.3337103 Reliability of modified tunneling barriers for high performance nonvolatile charge trap flash memory application Appl. Phys. Lett. 96, 043503 (2010); 10.1063/1.3293291 Silicon-oxide-high-κ -oxide-silicon memory using a high-κ Y 2 O 3 nanocrystal film for flash memory application Analysis of electronic memory trap… Show more

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“…One of the key reliability concerns for MTP application is DR window closure. Rather than the conventional tunnel oxide leakage model for eFlash, DR degradation model of logic eNVM is attributed to capacitive effect [1][2][3] in which the intrinsic DR behaviors are well established.…”
Section: Introductionmentioning
confidence: 99%
“…One of the key reliability concerns for MTP application is DR window closure. Rather than the conventional tunnel oxide leakage model for eFlash, DR degradation model of logic eNVM is attributed to capacitive effect [1][2][3] in which the intrinsic DR behaviors are well established.…”
Section: Introductionmentioning
confidence: 99%