Contact-Less Electrical Defect Characterization of Semi-Insulating 6H-SiC Bulk Material

Abstract

The novel technique microwave detected photo induced current transient spectroscopy (MD-PICTS) was applied to semi-insulating 6H-SiC in order to investigate the properties of inherent defect levels. Defect spectra can be obtained in the similar way to conventional PICTS and DLTS. However, there is no need for contacting the samples, which allows for non-destructive and spatially resolved electrical characterization. This work is focused on the investigation of semi-insulating 6H-SiC grown under different C/Si-ratios. In the corresponding MD-PICTS spectra several shallow defect levels appear in the low temperature range. However the peak assignment needs further investigation. Additionally different trap reemission dynamics are obtained for higher temperatures, which are supposed to be due to different compensation effects.

Contactless electrical defect characterization in semiconductors by microwave detected photo induced current transient spectroscopy (MD‐PICTS) and microwave detected photoconductivity (MDP)

“…11). Additionally in samples grown under different C/Si‐ratios different trap emission dynamics are obtained for higher temperatures, which are supposed to be due to different compensation effects 8. The activation energies and capture cross sections of the defect peaks calculated from the spectra from Fig.…”

“… Comparison of MD‐PICTS spectra of different SI‐6H‐SiC samples in different temperature ranges. Samples I–III were grown under same process conditions 8. …”

“…The method 7, 8 is based on the non‐destructive investigation of photoconductivity signals by microwave absorption. Through pulsed light excitation provided by a laser excess carriers are generated in the material.…”

“… (online color at: http://www.pss-a.com/) Physical processes and their corresponding signal parts in MD‐PICTS: (1) generation and trapping of carriers, (2) fast recombination process, (3) thermal reemission of trapped carriers 8. …”

Next generation inline minority carrier lifetime metrology on multicrystalline silicon bricks for PV

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In this paper the novel method MDP (microwave detected photoconductivity) [1][2][3][4] will be introduced to the field of contact less inline metrology at bricks. By the application of a widely advanced microwave detection technique, it is now possible to map minority carrier lifetime and photoconductivity simultaneously, with a so far unsurpassed combination of spatial resolution, sensitivity, and measurement speed.

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