Contact Resistance for “End-Contacted” Metal−Graphene and Metal−Nanotube Interfaces from Quantum Mechanics

Matsuda, Yuki; Deng, Wei; Goddard, William A.

doi:10.1021/jp806437y

Cited by 184 publications

(211 citation statements)

References 37 publications

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“…Therefore, the graphene-metal distance, wettability, or the deformation potential due to the metal contact can play significant roles in the coupling length. In terms of the graphene-metal distance, Ti is expected to show the lowest contact resistance as compared to Pd, Pt, Cu, and Au [57]. On the other hand, utilizing higher quality graphene, which exhibits higher mobility and less scattering, leads to the longer mean-free path.…”

Section: Process Dependence On the Contact Resistancementioning

confidence: 99%

“…An alternative approach to overcome the facial contact is to use the edge contact structure which is formed by a covalent bond between the metal atoms and the graphene; it is expected to show significantly lower contact resistance compared to the facial contact. Theoretical reports estimated that the contact resistivity could be as low as 10 to 10 3 times the facial contact based on a quantum tunneling process [57]. Very recently, contact modules considering the edge contact resistance were developed [80].…”

Section: Process Dependence On the Contact Resistancementioning

confidence: 99%

“…This can be noticed from the face, where there are widely varied or inconsistent results regarding the contact resistance in previous reports. For example, the Ti contact was predicted to show poor results in one report [25], but in other reports, it results in superior contact properties over other metals [22,57]. The conventional facial contact structure fabricated by the lift-off process is also a limitation when seeking to obtain good contact performance.…”

Section: Contact Module Processmentioning

confidence: 99%

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Contact resistance in graphene channel transistors

Song¹,

Cho²

2013

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The performance of graphene-based electronic devices is critically affected by the quality of the graphene-metal contact. The understanding of graphene-metal is therefore critical for the successful development of graphene-based electronic devices, especially field-effecttransistors. Here, we provide a review of the peculiar properties of graphene-metal contacts, including work function pinning, the charge transport mechanism, the impact of the process on the contract resistance, and other factors.

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Section: Process Dependence On the Contact Resistancementioning

confidence: 99%

Section: Process Dependence On the Contact Resistancementioning

confidence: 99%

Section: Contact Module Processmentioning

confidence: 99%

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Contact resistance in graphene channel transistors

Song¹,

Cho²

2013

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“…The quantum coupling between the CNT and the metal electrode depends on the contact area, CNT diameter, CNT chirality, and whether the CNT is side or end contacted [38,39]. In addition, coupling between the d-orbitals in the metal and the p-orbital in the CNT plays an important role in determining both the cohesive and the electronic interactions at the contacts [40].…”

Section: Contactmentioning

confidence: 99%

Nanomanufacturing Methods for the Reduction of Noise in Carbon Nanotube-Based Piezoresistive Sensor Systems

Cullinan

Culpepper

2013

Journal of Micro and Nano-Manufacturing

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Carbon nanotube (CNT)-based piezoresistive strain sensors have the potential to outperform traditional silicon-based piezoresistors in MEMS devices due to their high strain sensitivity. However, the resolution of CNT-based piezoresistive sensors is currently limited by excessive 1/f or flicker noise. In this paper, we will demonstrate several nanomanufacturing methods that can be used to decrease noise in the CNT-based sensor system without reducing the sensor's strain sensitivity. First, the CNTs were placed in a parallel resistor network to increase the total number of charge carriers in the sensor system. By carefully selecting the types of CNTs used in the sensor system and by correctly designing the system, it is possible to reduce the noise in the sensor system without reducing sensitivity. The CNTs were also coated with aluminum oxide to help protect the CNTs from environmental effects. Finally, the CNTs were annealed to improve contact resistance and to remove adsorbates from the CNT sidewall. The optimal annealing conditions were determined using a design-of-experiments (DOE). Overall, using these noise mitigation techniques it is possible to reduce the total noise in the sensor system by almost 3 orders of magnitude and increase the dynamic range of the sensors by 48 dB.

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“…4,5 In contrast, edge contacts to graphene remain much less explored. 6 Edge terminations have been observed to play an important role on the performance of graphene-based devices. 7,8 The effect of different edge terminations of graphene on contact transport properties remains unclear.…”

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confidence: 99%

Role of chemical termination in edge contact to graphene

Gao¹,

Guo²

2014

APL Materials

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Edge contacts to graphene can offer excellent contact properties. Role of different chemical terminations is examined by using ab initio density functional theory and quantum transport simulations. It is found that edge termination by group VI elements O and S offers considerably lower contact resistance compared to H and group VII element F. The results can be understood by significantly larger binding energy and shorter binding distance between the metal contact and these group VI elements, which results in considerably lower interface potential barrier and larger transmission. The qualitative conclusion applies to a variety of contact metal materials.

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Contact Resistance for “End-Contacted” Metal−Graphene and Metal−Nanotube Interfaces from Quantum Mechanics

Abstract: Figure S1-1. (a) Partial Density of States (PDOS) of Ti-graphene I-V model.

Cited by 184 publications

References 37 publications

Contact resistance in graphene channel transistors

Contact resistance in graphene channel transistors

Nanomanufacturing Methods for the Reduction of Noise in Carbon Nanotube-Based Piezoresistive Sensor Systems

Role of chemical termination in edge contact to graphene

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